Reliability extrapolation model for stressinduced-leakage current in thin silicon oxides

Electronics Letters

Volumn 33, Issue 15, 1997, Pages 1342-1344

  Scarpa, A ^a,b   Ghibaudo, G ^a   Pananakakis, G ^a   Paccagnella, A ^b   Ghidini, G ^c  

^a CNRS   (France)

^b UNIVERSITY OF PADOVA   (Italy)

^c STMICROELECTRONICS   (Italy)

Author keywords

Reliability

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; INDUCED CURRENTS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; RELIABILITY; SILICA; THIN FILMS;

STRESS INDUCED LEAKAGE CURRENTS (SILC);

MOSFET DEVICES;

EID: 0031188498     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970877     Document Type: Article

References (9)

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