High-brightness long-wavelength semiconductor disk lasers

Laser and Photonics Reviews

Volumn 2, Issue 3, 2008, Pages 160-181

  Schulz, Nicola ^a   Hopkins, John Mark ^b   Rattunde, Marcel ^a   Burns, David ^b   Wagner, Joachim ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

Infrared; OPSDL (optically pumped semiconductor disk lasers; Semiconductor lasers; VECSEL (vertical external cavity surface emitting lasers)

Indexed keywords

EID: 48949098094     PISSN: 18638880     EISSN: 18638899     Source Type: Journal    
DOI: 10.1002/lpor.200710037     Document Type: Review

References (96)

1. 00 Beams, IEEE Photonics Technol. Lett. 9, 1063 (1997).
2. A. Tropper, H. Foreman, A. Garnache, K. Wilcox, and S. Hoogland, Vertical-external-cavity semiconductor lasers, J. Phys. D, Appl. Phys. 37, R75-R85 (2004).
3. A. Giesen, H. Hügel, A. Voss, K. Wittig, U. Branch, and H. Opower, Scalable Concept For Diode-Pumped High-Power Solid-State Lasers, Appl. Phys. B, Lasers Opt. 58, 365 (1994).
4. M. Müller, N. Linder, C. Karnutsch, W. Schmid, K. Streubel, J. Luft, S.-S. Beyertt, A. Giesen, and G. D_dohler, Optically Pumped Semiconductor Thin-Disk Laser with External Cavity Operating at 660 nm, Proc. SPIE 4649, 265 (2002).
5. J. Hastie, S. Calvez, and M. Dawson, High power CW red OPSDL with linearly polarized TEM00 output beam, Opt. Express 13, 77 (2005).
6. L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm, J. Cryst. Growth 268, 128 (2004).
7. M. Rahim, M. Arnold, F. Felder, K. Behfar, and H. Zogg, Mid-infrared lead-chalcogenide vertical external cavity surface emitting loser with 5 μm wavelength, Appl. Phys. Lett. 91, 151102 (2007).
8. J. E. Hastie, L. G. Morton, A. J. Kemp, M. D. Dawson, A. B. Krysa, and J. S. Roberts, Tunable ultraviolet output from an intracavity frequency-doubled red vertical-external-cavity surface-emitting laser, Appl. Phys. Lett. 89, 061114 (2006).
9. J. Chilla, S. Butterworth, A. Zeitschel J. Charles, A. L. Coprara, M. K. Reed, and L. Spinelli, High Power Optically Pumped Semiconductor Lasers, Proc. SPIE 5332, 146 (2004).
10. J.-Y. Kim, S. Cho, S.-M. Lee, G. B. Kim, J. Lee, J. Yoo, K.-S. Kim, T. Kim, and Y. Park, Highly efficient green VECSEL with intra-cavity diamond heat spreader, Electron. Lett. 43, 2 (2007).
11. L. Fan, T. Hsu, M. Fallahi, J. Murray, R. Bedford, Y. Kaneda, J. Hader, A. Zakharian, J. Moloney, S. Koch, and W. Stolz, Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling, Appl. Phys. Lett. 88, 251117 (2006).
12. J. L. A. Chilla, H. Zhou, E. Weiss, A. L, Caprara, Q. Shou, S. V. Govorkov, M. K. Reed, and L. Spinelli, Blue and Green OpticaUy-Pumped Semiconductor Lasers for Display., in Projection displays 11, Proc. SPIE 5740, 41 (2005).
13. E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser, J. Appl. Phys. 94, 7397 (2003).
14. H. Soda, K. Iga, C. Kitahara, et al., GaInAsP-InP Surface Emitting Injection-Lasers, Jpn. J. Appl. Phys. 18, 2329 (1979).
15. M. A. Holm, D. Burns, A. I. Ferguson, and M. D. Dawson, Single-frequency second-harmonic generation in a vertical external-cavity semiconductor laser, in: Proceedings of the Conference on Lasers and Electro-Optics (CLEO 2000), pp.440 441.
16. U. Keller and A. C. Tropper, Passively modelocked surface-emitting semiconductor lasers, Phys. Rep. 429, 67-120 (2006).
17. D. Lorenser, D. Maas, H. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, 50-GHZ Passively Mode-Locked Surface-Emitting Semiconductor Laser With 100 mW Average Output Power, IEEE J. Quantum Electron. 42, 838 (2006).
18. M. A. Holm, D. Burns, A. I. Ferguson, and M D. Dawson, Actively stabilised, tunable single frequency operation of a vertical external cavity surface emitting laser, in: Proceedings of LEOS 99. IEEE Lasers and Electro-Optics Society 1999, 12th Annual Meeting, Vol. 2 (1999), pp. 792-793.
19. J.-M. Hopkins, A. J. Maclean, D. Burns, E. Riis, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, Tunable, Single-frequency, Diode-pumped 2.3 μm OPSPL, Opt. Express 15, 8212 (2007).
20. S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, 8 W high-efficiency continuous-wave semiconductor disk laser at 1000 nm, Appl. Phys. Lett. 82, 3620 (2003).
21. S.-S. Beyertt, M. Zorn, T. Kübler, H. Wenzel, M. Weyers, A. Giesen, G. Tränkle, and U. Brauch, Optical in-well pumping of a semiconductor disk laser with high optical efficiency, IEEE J. Quantum Electron. 41, 1439 (2005).
22. J. Moloney, J. Hader, and S. Koch, Quantum design of semiconductor active materials: laser and amplifier applications, Laser Photonics Rev. 1, 24 (2007).
23. S.-S. Beyertt, U. Brauch, F. Demaria, N. Dhidah, A. Giesen, T. Kübler, S. Lorch, F. Rinaldi, and P. Unger, Efficient gallium-arsenide disk laser, IEEE J. Quantum Electron. 43, 869 (2007).
24. M. Raja, S. Brueck, M. Osinski, C. Schaus, J. McInerney, T. Brennan, and B. Hammons, Resonant periodic gain surface-emitting semiconductor lasers, IEEE J. Quantum Electron. 25, 1500 (1989).
25. S. W. Corzine, R. S. Geels, J. W. Scott, R.-H. Yan, and L. A. Coldren, Design of Fabry-Perot surface-emitting lasers with a periodic gain structure, IEEE J. Quantum Electron. 25, 1513 (1989).
26. N. Schulz, M. Rattunde, C. Manz, K. Köhler, C. Wild, J. Wagner, S.-S. Beyertt, U. Brauch, T. Kübler, and A. Giesen, Optically pumped GaSb-based OPSDL emitting 0.6 W at 2.3 μm, IEEE Photonics Technol. Lett. 18, 1070 (2006).
27. M. Rattunde et al., High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 μm, Proc. SPIE 6479, 647915 (2007).
28. N. Schulz, M. Rattunde, C. Ritzenthaler, B. Rösener, C. Manz, K. Köhler, and J. Wagner, Effect of the cavity resonante-gain offset on the output power characteristics of GaSb-based OPSDLs, IEEE Photonics Technol. Lett. 19, 1741 (2007).
29. A. R. Zakharian, J. Hader, J. V. Moloney, and S. W. Koch, VECSEL threshold and output power-shutoff dependence on the carrier recombination rates, IEEE Photonics Technol. Lett. 17, 2511 (2005).
30. R. G. Bedford, M. Kolesik, J. L. A. Chilla, M. K. Reed, T. R. Nelson, and J. V. Moloney, Power-limiting mechanisms in VECSELs, Proc. Int. Soc. Opt. Eng. 5814, 199 (2005).
31. A. J. Kemp, G. J. Valentine, J. M. Hopkins, J. E. Hastie, S.A. Smith, S. Calvez, M.D. Dawson, and D. Burns, Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach, IEEE J. Quantum Electron. 41, 148 (2005).
32. H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers, IEEE J. Quantum Electron. 11, 1126 (2005).
33. C. Symonds, J. Dion, I. Sagnes, M. Danese, M. Strassner, L. Leroy, and J.-L. Oudar, High performance 1.55 μm vertical external cavity surface emitting laser with broadband integrated dielectric-metal mirror, Electron. Lett. 40, 734 (2004).
34. W. J. Alford, T. D. Raymond, and A. A. Allerman, High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser, J. Opt. Soc. Am. B, Opt. Phys. 19, 663 (2002).
35. Z. L. Liau, Semiconductor wafer bonding via liquid capillarity, Appl. Phys. Lett. 77, 651 (2000).
36. J. E. Hastie, J. M. Hopkins, S. Calvez, C. W. Jeon, D. Burns, R. Abram, E. Riis, A. I. Ferguson, and M. D. Dawson, 0.5 W single transverse-mode operation of an 850-nm diodepumped surface-emitting semiconductor laser, IEEE Photonics Technol. Lett. 15, 894 (2003).
37. J. M. Hopkins et al., 0.6 W CW GaInNAs vertical external-cavity surface emitting laser operating at 1.32 μm, Electron. Lett. 40, 30 (2004).
38. J. Yoo, K. Kim, S. Lee, S. Lim, G. Kim, J. Kim, S. Cho, J. Lee, T. Kim, and Y. Park, Gain structure optimization of vertical external cavity surface emitting laser at 920 nm, Appl. Phys. Lett. 89, 131125 (2006).
39. K. S. Kim, J. R. Yoo, S. H. Cho, S. M. Lee, S. J. Lim, J. Y. Kim, J. H. Lee, T. Kim, and Y. J. Park, 1060 nm vertical-external-cavity surface-emitting lasers with an optical-to-optical efficiency of 44% at room temperature, Appl. Phys. Lett. 88, 091107 (2006).
40. J. V. Moloney, J. Hader, S. W. Koch, L. Fan, C. Hessenius, M. Fallahi, and W. Stolz, Closed-Loop Quantum Design of a Multi-Watt 1178 run OPSDL, Presented at European Conference on Lasers and Electro-Optics, 2007.
41. A. Härkönen, J. Rautiainen, M. Guina, J. Konttinen, P. Tuomisto, L. Orsila, M. Pessa, and O. G. Okhotnikov, High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm, Opt. Express 15, 3224 (2007).
42. H. Lindberg, A. Strassner, E. Gerster, and A. Larsson, 0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 mn, Electron. Lett. 40, 601 (2004).
43. J.-M. Hopkins, N. Hempler, D. Burns, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, High-power (AlGaln)(AsSb) semiconductor disk laser at 2.0 μm, Opt. Lett. 30, 201 (2008).
44. N. Schulz, M. Rattunde, C. Ritzenthaler, B. Rösener, C. Manz, K. Köhler, and J. Wagner, Resonant optical in-well pumping of an (AlGaln)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35 μm, Appl. Phys. Lett. 91, 091113 (2007).
45. B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, and J. Wagner, High-power, high-brightness operation of a 2.25 μm (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser, submitted to IEEE Photonics Technol. Lett.
46. A. J. Kemp, J.-M. Hopkins, A. J. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, Thermal management in 2.3 μm semiconductor disk lasers: a finite element analysis, IEEE J. Quantum Electron. 44, 125 (2008).
47. M. Schmid, S. Benchabane, F. Torabi-Goudarzi, R. Abram, A. Ferguson, and E. Riis, Optical in-well pumping of a vertical-external-cavity surface-emitting laser, Appl. Phys. Lett. 84, 4860 (2004).
48. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, Design and characteristics of high-power ( 0.5 W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams, IEEE J. Sel. Top. Quantum Electron. 5, 561 (1999).
49. T.D. Raymond, W.J. Alford, M.H. Crawford, and A. A. Allerman, Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser, Opt. Lett. 24, 1127 (1999).
50. J. H. Lee, J. Y. Kim, S. M. Lee, J. R. Yoo, K. S. Kim, S. H. Cho, S. J. Lim, G. B. Kim, S. M. Hwang, T. Kim, and Y. J. Park, 9.1 W high-efficiency continuous-wave end-pumped vertical-external-cavity surface-emitting semiconductor laser, IEEE Photonics Technol. Lett. 18, 2117 (2006).
51. J. E. Hastie, J. M. Hopkins, C. W. Jeon, S. Calvez, D. Burns, M. D. Dawson, R. Abram, E. Riis, A. I. Ferguson, W. J. Alford, T. D. Raymond, and A. A. Allerman, Microchip vertical external cavity surface emitting lasers, Electron. Lett. 39, 1324 (2003).
52. L. Fan, M. Fallahi, J. Hader, A. R. Zakharian, J. V. Moloney, J. T. Murray, R. Bedford, W. Stolz, and S. W. Koch, Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme, Opt. Lett. 31, 3612 (2006).
53. E. Saarinen, A. H-dsarkönen, S. Suomalainen, and O. Okhotnikov, Power scalable semiconductor disk laser using multiple gain cavity, Opt. Express 14, 12868 (2006).
54. Juan Chilla, Private communication, Coherent Inc., Santa Clara CA, USA July 2005.
55. S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Härkönen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, and W. Sibbett, GaInNAs(Sb) Surface Normal Devices, accepted for publication in physica status solidi a (2008).
56. W. Diehl, P. Brick, B. Kunert, S. Reinhard, K. Volz, and W. Stolz, Low threshold 1260 nm (GaIn) (NAs) semiconductor disk laser, Appl. Phys. Lett. 91, 071103 (2007).
57. M. C. Larson M. Kondow, T. Kitatani, K. Tamura, and M. Okai, Photopumped lasing at 1.25 μm of GaInNAs-GaAs multiple-quantum-well vertical-cavity surface-emitting lasers, Photonics Technol. Lett. 9, 1549 (1997).
58. M. Guden and J. Piprek, Material parameters of quaternary III-V semiconductors for multilayer mirrors at 1.55 mm wavelength, Modelling Simul. Mater. Sci. Eng 4, 349 (1996).
59. T. Nguyen, C. Shen, X. Wu, T. Pinnington, J. Krogen, B. Witzigmann, C. Tsai, L. Cote, M. Geva, D. Huynh, A. Konkar, and P. C. Chen, Design and fabrication of 1.3 mm vertical-cavity surface-emitting lasers using dielectric reflectors, IEEE Photonics Technol. Lett. 15, 1498 (2003).
60. A. Karim, S. Bjorlin, J. Piprek, and J. E. Bowers, Long-wavelength vertical-cavity lasers and amplifiers, J. Sel. Top. Quantum Electron. 6, 1244 (2000).
61. J. Boucart, C. Starck, F. Gaborit, A. Plais, N. Bouche, E. Derouin, J. C. Remy, J. Bonnet-Gamard, L. Goldstein, C. Fortin, D. Carpentier, P. Salet, F. Brillouet, and J. Jacquet, Metamorphic DBR and tunnel-junction injection: A CW RT monolithic long-wavelength VCSEL, MEE J. Sel. Top. Quantum Electron. 5, 520 (1999).
62. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa, GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance, Jpn. J. Appl. Phys. 35, 1273 (1996).
63. H. Riechert, S. Tomi and E. P. O'Reilly, Derivation of a 10-band k-p model for dilute nitride semiconductors, Solid-State Electron. 47, 443 (2003).
64. A. Lindsay et al., Solid State Electron. 47, 443 (1999).
65. H. D. Sun, A. H. Clark, H. Y. Liu, et al., Optical characteristics of 1.55 μm GaInNAs multiple quantum wells, Appl. Phys. Lett. 85, 4013 (2004).
66. M. Hugues, B. Damilano, J. Baijon, et al., Performance improvement of 1.52 μm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates, Electron. Lett. 41, 595 (2005).
67. S. A. Smith, J.-M. Hopkins, J. E. Hastie, et al., Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315 nm, Electron. Lett. 40, 935 (2004).
68. S. Calvez, S. Giet, A. J. Kemp, J. E. Hastie, M. D. Dawson, T. Jouhti, J. Konttinen, and M. Pessa, Tunable red laser emission by intra-cavity doubling of a GaInNAs VECSEL, in: Proceedings of the Conference on Lasers and Electro-Optics 2007, paper CMFF2 (2007).
69. K. Hsu, C. M. Miller, D. Babic, et al., Continuously tunable photopumped 1.3 μm fiber Fabry-Perot surface-emitting lasers, IEEE Photonics Technol. Lett. 10, 1199 (1998).
70. A. Rutz, R. Grange, V. Liverini, M. Haiml, S. Schön, and U. Keller, 1.5 μm GaInNAs semiconductor saturable absorber for passively modelocked solid-state lasers, Electron. Lett. 41, 321 (2005).
71. J. Konttinen, A. Härkönen, P. Tuomisto, M. Guina, J. Rautiainen, M. Pessa, and O. Okhotnikov, High-power (> 1 W) dilute nitride semiconductor disk laser emitting at 1240 nm, New J. Phys. 9, 140 (2007).
72. J. Rautiainen, A. Härkönen, P. Tuomisto, J. Konttinen, L. Orsila, M. Guina, and O. G. Okhomikov, 1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser, Electron. Lett. 43, 980 (2007).
73. G. Jaschke et al., J. Cryst. Growth 278, 224 (2005).
74. M. Hughes, B. Damilano, J.-Y. Duboz, and J. Massies, Optimum indium composition for (Ga,In)(N,As)/GaAs quantum wells emitting beyond 1.5 μm, Appl. Phys. Lett. 88, 091111 (2006).
75. H. Y. Liu, M. Hopkinson, P. Navaretti, M. Gutierrez, J. S. Ng, and J. P. R. David, Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer, Appl. Phys. Lett. 83, 4951 (2003).
76. N. V. Kryzhanovskaya, A. Y. Egorov, V. V. Mamutin, N. K. Polyakov, A. F. Tsatsulnìkov, Y. G. Musikhin, A. R. Kovsh, N. N. Ledentsov, V. M. Ustinov, and D. Bimberg, Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm, Semicond. Sci. Technol. 20, 961 (2005).
77. I. Vurgaftman, J. R. Meyer, N. Tansu, and L. J. Mawst, InGaAsN-based type-II "W" quantum-well lasers for emission at 1.55 μm, Appl. Phys. Lett. 83, 2742 (2003).
78. J. Y. Yeh, L. J. Mawst, A. A. Khandekar, T. F. Kuech, I. Vurgaftman, and J. R. Meyer, Long wavelength emission of InGaAsN/GaAsSb type II "W" quantum wells, Appl. Phys. Lett. 88, 051115 (2006).
79. J. S. Harris, Jr, The opportunities, successes and challenges for GaInNAsSb, J. Cryst. Growth 278, 3 (2005).
80. J. A. Gupta, G. I. Sproule, X. Wu, and Z. R. Wasilewski, Molecular beam epitaxy growth of GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence, J. Cryst. Growth 291, 86 (2006).
81. L. H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, L. Travers, and J. C. Harmand, Investigations on GaIn-NAsSb quinary alloy for 1.5 μm laser emission on GaAs, Appl. Phys. Lett. 83, 1298 (2003).
82. H. Lindberg, M. Strassner, and A. Larsson, Improved spectral properties of an optically pumped semiconductor disk laser using a thin diamond heat spreader as an intracavity filter, IEEE Photonics Technol. Lett. 17, 1363 (2005).
83. B. Jean, T. Bende, Mid-IR laser applications in medicine, in: Solid-State Mid-Infrared Laser Sources, Topics in Applied Physics Vol. 89, edited by I. T. Sorokina and K. L. Vodopyanov (Springer-Verlag, Berlin, 2003), pp. 511-544.
84. J. T. Olesberg, Noninvasive blood glucose monitoring in the 2.0-2.5 μm spectral range, in: 2001 IEEE/LEOS Conf. Proc. Vol. 2, p. 529.
85. A. Härkönen, M. Guina, O. Okhotnikov, K. Rößner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, and M. Fischer, 1 W antimonide-based vertical external cavity surface emitting laser operating at 2 μm, Opt. Express 14, 6479 (2006).
86. A. Ouvrard, A. Garnache, L. Cerutti, F. Genty, and D. Romanini, Single-Frequency Tunable Sb-Based OPSDLs Emitting at 2.3 μm, IEEE Photonics Technol. Lett. 17, 2020 (2005).
87. N. Hempler, J.-M. Hopkins, D. Burns, U.N. Roy, A. Burger, B. Rösener, N. Schulz, M. Rattunde, and J. Wagner, submitted to The Conference of Lasers and Electro-Optics CLEO 2008.
88. M. Rattunde, M. Kelemen, N. Schulz, C. Pfahler, C. Manz, J. Schmitz, G. Kaufel, and J. Wagner, High-brightness 2.X μm semiconductor lasers, in: Mid-Infrared Coherent Sources and Applications, edited by M. Ebrahimzadeh and I. Sorokina (Springer, Dordrecht (NL), 2007).
89. J. Faist, F. Capasso, D. L. Sirtori, A. L. Hutchinson, and A. Y. Cho, Quantum cascade laser, Science 264, 553 (1994).
90. J. Devenson, R. Teissier, O. Cathabard, and A. N. Baranov, InAs/AISb quantum cascade lasers emitting below 3 μm, Appl. Phys. Lett. 90, 111118 (2007).
91. S. Kumar, B. S. Williams, Q. Hu, and J. L. Reno, 1.9 THz quantum-cascade lasers with one-well injector, Appl. Phys. Lett. 88, 121123 (2006).
92. W. W. Bewley, C. L. Felix, I. Vurgaftman, E. H. Aifer, J. R. Meyer, L. Goldberg, J. R. Lindle, D. H. Chow, and E. Selvig, Continuous-wave mid-infrared VCSELs, IEEE Photonics Technol. Lett. 10, 660 (1998).
93. J. R. Meyer, C. A. Hoffman, F. J. Bartoli, and L. R. Ram-Mohan, Type-II quantum-well lasers for the mid-wavelength infrared, Appl. Phys. Lett. 67, 757 (1995).
94. P. C. Findlay, C. R. Pidgeon, R. Kotitschke, A. Hollingworth, B.N. Murdin, C.J. Langerak, A. van der Meer, C. M. Ciesla, J. Oswald, A. Homer, G. Springholz, and G. Bauer, Auger recombination dynamics of lead salts under picosecond free-electron-laser excitation, Phys. Rev. B 58, 12908 (1998).
95. D. Khokhlov (Ed.), Lead chalcogenides, Physics and Applications, in: Optoelectronic Properties of Semiconductors and Superlattices, Vol. 18, series edited by M. O. Manasreh (Taylor & Francis Books Inc., New York, London, 2003).
96. M. Rahim, M. Arnold, F. Felder, I. Zasavitiskiy, and H. Zogg, Mid-infrared lead-salt OPSDL (vertical external cavity surface emitting laser) for spectroscopy, in: Proceedings of the 13th International Conference on Narrow Gap Semiconductors 2007, Springer Proceedings in Physics Series, to be published.