0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser

IEEE Photonics Technology Letters

Volumn 15, Issue 7, 2003, Pages 894-896

  Hastie, Jennifer E ^a   Hopkins, John Mark ^a   Calvez, Stephane ^a   Jeon, Chan Wook ^a   Burns, David ^a   Abram, Richard ^a   Riis, Erling ^a   Ferguson, Allister I ^a   Dawson, Martin D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

High power; Thermal management; Vertical external cavity surface emitting laser (VECSEL)

Indexed keywords

CAPILLARITY; LASER BEAM EFFECTS; PUMPING (LASER); SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

SINGLE-TRANSVERSE MODE OPERATION;

SEMICONDUCTOR LASERS;

EID: 0038002443     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.813446     Document Type: Article

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