High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 μm

Optics Letters

Volumn 33, Issue 2, 2008, Pages 201-203

  Hopkins, J M ^a   Hempler, N ^a   Rosener B ^b   Schulz, N ^b   Rattunde, M ^b   Manz, C ^b   Kohler K ^b   Wagner, J ^b   Burns, D ^a  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BEAM PROPAGATION PARAMETER; LASER EMITTING; SEMICONDUCTOR DISK LASERS;

BEAM PROPAGATION METHOD; LASER TUNING; SEMICONDUCTOR LASERS; TEMPERATURE CONTROL; WAVELENGTH;

ALUMINUM GALLIUM NITRIDE;

EID: 40149100141     PISSN: 01469592     EISSN: None     Source Type: Journal    
DOI: 10.1364/OL.33.000201     Document Type: Article

References (16)