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Volumn 17, Issue 10, 2005, Pages 2020-2022

Single-frequency tunable Sb-based VCSELs emitting at 2.3 μm

Author keywords

Infrared spectroscopy; Quantum well lasers; Semiconductor lasers; Surface emitting lasers

Indexed keywords

CAVITY RESONATORS; CONTINUOUS WAVE LASERS; DIELECTRIC MATERIALS; INFRARED SPECTROSCOPY; LASER TUNING; MIRRORS; MOLECULAR BEAM EPITAXY; QUANTUM WELL LASERS; SEMICONDUCTING ANTIMONY;

EID: 26844450653     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.856341     Document Type: Article
Times cited : (85)

References (7)
  • 1
    • 0038646069 scopus 로고    scopus 로고
    • "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm"
    • May
    • S. Lutgen, T. Albrecht, E Brick, W. Reill, J. Luft, and W. Spath, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett., vol. 82, pp. 3620-3622, May 2003.
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 3620-3622
    • Lutgen, S.1    Albrecht, T.2    Brick, P.3    Reill, W.4    Luft, J.5    Spath, W.6
  • 2
    • 26844482633 scopus 로고    scopus 로고
    • "Demonstration of methane spectroscopy using a vertical-cavity surface-emitting laser at 1.68 μm with up to 5 Mhz repetition rate"
    • M. Lackner, G. Totschnig, F. Winter, M. Ortsiefer, M.-C. Amann, R. Shan, and J. Rosskopf, "Demonstration of methane spectroscopy using a vertical-cavity surface-emitting laser at 1.68 μm with up to 5 Mhz repetition rate," Meas. Sci. Technol., vol. 13, pp. 1-6, 2002.
    • (2002) Meas. Sci. Technol. , vol.13 , pp. 1-6
    • Lackner, M.1    Totschnig, G.2    Winter, F.3    Ortsiefer, M.4    Amann, M.-C.5    Shan, R.6    Rosskopf, J.7
  • 3
    • 2942720950 scopus 로고    scopus 로고
    • "High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm"
    • L. Cerutti, A. Garnache, A. Ouvrard, and F. Genty, "High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm," J. Cryst. Growth, vol. 268, pp. 128-134, 2004.
    • (2004) J. Cryst. Growth , vol.268 , pp. 128-134
    • Cerutti, L.1    Garnache, A.2    Ouvrard, A.3    Genty, F.4
  • 5
    • 0037049562 scopus 로고    scopus 로고
    • "Measurements of α-factor in 2-2.5 μm type-I In(Al)GaAsSb/ GaSb high power diode lasers"
    • Dec.
    • L. Shterengas, G. L. Belenky, A. Gourevitch, J. G. Kim, and R. U. Martinelli, "Measurements of α-factor in 2-2.5 μm type-I In(Al)GaAsSb/GaSb high power diode lasers," Appl. Phys. Lett., vol. 81, pp. 4517-4519, Dec. 2002.
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 4517-4519
    • Shterengas, L.1    Belenky, G.L.2    Gourevitch, A.3    Kim, J.G.4    Martinelli, R.U.5
  • 6
    • 0033340283 scopus 로고    scopus 로고
    • "Actively stabilized single-frequency vertical-external-cavity AlGaAs laser"
    • Dec.
    • M. A. Holm, D. Burns, and A. I. Ferguson, "Actively stabilized single-frequency vertical-external-cavity AlGaAs laser," IEEE Photon. Technol. Lett., vol. 11, no. 12, pp. 1551-1553, Dec. 1999.
    • (1999) IEEE Photon. Technol. Lett. , vol.11 , Issue.12 , pp. 1551-1553
    • Holm, M.A.1    Burns, D.2    Ferguson, A.I.3
  • 7
    • 0034409142 scopus 로고    scopus 로고
    • "Diode-pumped broad-band vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy"
    • Sep.
    • A. Garnache, A. A. Kachanov, E Stoeckel, and R. Houdré, "Diode-pumped broad-band vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy," J. Opt. Soc. Amer. B, vol. 17, pp. 1589-1598, Sep. 2000.
    • (2000) J. Opt. Soc. Amer. B , vol.17 , pp. 1589-1598
    • Garnache, A.1    Kachanov, A.A.2    Stoeckel, F.3    Houdré, R.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.