Metamorphic DBR and tunnel-junction injection: a CW RT monolithic long-wavelength VCSEL

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 520-529

  Boucart, J ^a,b   Starck, C ^a   Gaborit, F ^a   Plais, A ^a   Bouche N ^a   Derouin, E ^a   Remy, J C ^a   Bonnet Gamard, J ^a   Goldstein, L ^a   Fortin, C ^a   Carpentier, D ^a   Salet, P ^a   Brillouet, F ^a   Jacquet, J ^a  

^a NOKIA RESEARCH CENTER   (United States)

^b INSA   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC PROPERTIES; ION IMPLANTATION; LASER RESONATORS; MIRRORS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THERMODYNAMIC PROPERTIES; TUNNEL DIODES; TUNNEL JUNCTIONS;

DISTRIBUTED BRAGG REFLECTORS; LASING; TUNNEL JUNCTION INJECTION; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0033123732     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788414     Document Type: Article

References (25)

1. T. Baba, Y. Yogo, K. Suzuki, F. Koyama, and K. Iga, "Near room temperature continuous wave lasing characteristics of GaInAsP-InP surface emitting laser," Electron. Lett., vol. 29, no. 10, pp. 913-915, May 1993.
2. S. Uchiyama, N. Yokouchi, and T. Ninomiya, "Continuous wave operation up to 36°C of 1.3 μm GaInAsP-InP vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 9, pp. 141-142, Feb. 1997.
3. D. I. Babic, K. Streubel, R. P. Mirin, N. M. Margalit, J. E. Bowers, and E. L. Hu, "Room temperature continuous wave operation of 1.54-μm vertical cavity lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 1225-1227, Nov. 1995.
4. V. Jayaraman, J. C. Geske, M. H. McDougal, F. H. Peters, T. D. Lowes, and T. T. Char, "Uniform threshold, continuous wave, single mode 1300 nm vertical cavity lasers from 0 to 70°C," Electron. Lett., vol. 34, no. 14, pp. 1405-1407, July 1998.
5. Y. Qian, Z. H. Hu, Y. H. Lo, D. L. Huffaker, D. G. Deppe, H. Q. Hou, B. E. Hammons, W. Lin, and Y. K. Tu, "Long wavelength (1.3 μm) vertical cavity surface emitting lasers with a wafer bonded mirror and an oxygen implanted confinement region," Appl. Phys. Lett., vol. 71, no. 1, pp. 25-27, July 1997.
6. K. A. Black, N. M. Margalit, E. R. Hegblorn, P. Abraham, Y.-J. Chiu, J. Piprek, J. E. Bowers, and E. L. Hu, "Double fused 1.5 μm vertical cavity lasers operating continuous wave up to 71°C," in Int. Semiconduct. Laser Cof., Nara, Japan, Oct. 4-8, 1998.
7. K. Streubel, S. Rapp, J. André, and J. Wallin, "Room temperature, pulsed operation of 1.5-μm vertical cavity lasers, with an InP-based Bragg reflector," IEEE Photon. Technol. Lett., vol. 8, pp. 1121-1123, July 1996.
8. S. Rapp, F. Salomonsson, J. Bentell, I. Sagnes, H. Moussa, C. Mériadec, R. Raj, K. Streubel, and M. Hammar, "Near room-temperature continuous wave operation of electrically pumped 1.55 μm vertical cavity lasers with InGaAsP/InP bottom mirror," Electron. Lett., vol. 35, no. 1, pp. 49-50, Jan. 1999.
9. G. Ungaro, J. C. Harmand, B. Sermage, I. Sagnes, J. P. Debray, C. Meriadec, and J. L. Oudar, "Room temperature continuous wave operation VCSEL at 1.48 μm with Sb based Bragg reflector," Electron. Lett., vol. 34, no. 14, pp. 1402-1404, July 9, 1998.
10. C. Kazmierski, J. P. Debray, R. Madani, N. Bouadma, J. Etrillard, I. Sagnes, F. Alexandre, and M. Quillec, "First all-monolithic VCSEL's on InP: +55°C pulse lasing at 1.56 μm with GaInAlAs/InP system," in Int. Semiconduct. Laser Conf. Nara, Japan, Oct. 4-8, 1998.
11. J. Boucart, C. Starck, A. Plais, E. Derouin, C. Fortin, F. Gaborit, A. Pinquier, L. Goldstein, D. Carpentier, and J. Jacquet, "RT pulsed operation of metamorphic VCSEL at 1.55 μm," Electron. Lett., vol. 34, no. 22, pp. 2133-2135, Oct. 1998.
12. H. Gebretsadik, P. K. Bhattacharya, K. K. Kamath, O. R. Qasaimeh, D. J. Klotzkin, C. Caneau, and R. Bhat, "InP-based vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors," Electron. Lett., vol. 34, no. 13, pp. 1316-1318, June 1998.
13. S. Rapp and K. Streubel, "Periodic gain structures for vertical cavity surface emitting lasers," Mater. Sci. Eng., vol. B44, pp. 373-375, 1997.
14. P. Salet, P. Pagnod-Rossiaux, F. Gaborit, A. Plais, and J. Jacquet, "Gas-source molecular beam epitaxy and optical characterization of highly reflective InGaAsP/InP multilayer Bragg mirrors for 1.3 μm vertical-cavity lasers," Electron. Lett., vol. 33, no. 13, pp. 1145-1147, 1997.
15. D. I. Babic, J. Piprek, K. Streubel, R. P. Mirin, N. M. Margalit, D. E. Mars, J. E. Bowers, and E. L. Hu, "Design and analysis of double fused 1.55-μm vertical cavity lasers," IEEE J. Quantum Electron., vol. 33, pp. 1369-1383, Aug. 1997.
16. J. C. Garcia, E. Rosencher, P. Collot, N. Laurent, J. L. Guyaux, E. Chirlias, and J. Nagle, "Epitaxially stacked GaAs/AlGaAs lasers using a low resistance tunnel junction," in 10th Int. Conf. Molecular Beam Epitaxy, Cannes, France, Sept. 1998, paper We8.2.
17. J. J. Wierer, P. W. Evans, N. Holoniak, and D. A. Kellog, "Vertical cavity surface emitting lasers utilizing native oxide mirrors and buried tunnel contact junctions," Appl. Phys. Lett., vol. 72, no. 21, pp. 2742-2744, May 1998.
18. A. N. Korshak, Z. S. Gribnikov, and V. V. Mitin, "Tunnel-junction-connected distributed-feedback vertical-cavity surface-emitting laser," Appl. Phys. Lett., vol. 73, no. 11, pp. 1475-1477, Sept. 1998.
19. D. I. Babic, "Double fused long wavelength vertical cavity lasers," Ph.D. dissertation, Dept. Elect. Comput. Eng., Univ. California at Santa Barbara, Santa Barbara, CA, Aug. 1995.
20. C.-T. Lee, C.-Y. Wang, and Y.-C. Chou, "Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE," Thin Solid Films, vol. 286, pp. 107-110, 1996.
21. J. Boucart, F. Gaborit, C. Fortin, L. Goldstein, J. Jacquet, and K. Leifer, "Optimization of the metamorphic growth of GaAs for long wavelength VCSEL's," J. Cryst. Growth, vol. 201/202, pp. 1015-1019, Apr. 1999.
22. L. Goldstein, C. Fortin, C. Starck, A. Plais, J. Jacquet, J. Boucart, A Rocher, and C. Poussou, "GaAlAs/GaAs metamorphic Bragg mirror for long wavelength VCSEL's," Electron. Lett., vol. 34, no. 3, pp. 268-270, 1998.
23. K. Kurihara, T. Numai, I. Ogura, M. Sugimoto, and K. Kasahara, "Reduction in the series resistance of the distributed Bragg reflector in vertical cavities by using quasigraded superlattices at the heterointerfaces," J. Appl. Phys., vol. 73, pp. 21-27, Jan. 1993.
24. P. Salet, A. Plais, E. Derouin, C. Fortin, C. Starck, J. Jacquet, and F. Brillouet, "Undercut ridge structure: A novel approach to 1.3/1.55 μm vertical cavity lasers designed for continuous wave operation," Proc. IEEE, vol. 145, pp. 125-131, Feb. 1998.
25. J. Piprek, T. Tröger, B. Schröter, J. Kolodzey, and C. S. Ih, "Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflector," IEEE Photon. Technol. Lett., vol. 10, pp. 81-83, Jan. 1998.