Microchip vertical external cavity surface emitting lasers

Electronics Letters

Volumn 39, Issue 18, 2003, Pages 1324-1326

  Hastie, J E ^a   Hopkins, J M ^a   Jeon, C W ^a   Calvez, S ^a   Burns, D ^a   Dawson, M D ^a   Abram, R ^a   Riis, E ^a   Ferguson, A I ^a   Alford, W J ^b   Raymond, T D ^b   Allerman, A A ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY;

OPTICAL CONTACTS;

SEMICONDUCTOR LASERS;

EID: 0141717799     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030839     Document Type: Article

References (7)

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5. HOLM, M.A., BURNS, D., FERGUSON, A.I., and DAWSON, M.D.: 'Actively stabilized single-frequency vertical-external-cavity AlGaAs laser', IEEE Photonics Technol. Lett., 1999, 11, pp. 1551-1553
6. ALFORD, W.J., RAYMOND, T.D., and ALLERMAN, A.A.: 'High power and good beam quality at 980 nm from a vertical external-cavity surface-emitting laser', J. Optical Society of America B (JOSA B), 2002, 19, pp. 663-666
7. HASTIE, J.E., HOPKINS, J.-M., CALVEZ, S., JEON, C.W., BURNS, D., ABRAM, R., RIIS, E., FERGUSON, A.I., and DAWSON, M.D.: '0.5 W single transverse mode operation of an 850 nm diode-pumped surface-emitting semiconductor laser', IEEE Photonics Technol. Lett., 2003, 15, pp. 894-896