Performance improvement of 1.52 μm (Ga,In)(N,As)/GaAs quantum well lasers on GaAs substrates

Electronics Letters

Volumn 41, Issue 10, 2005, Pages 595-596

  Hugues, M ^a   Damilano, B ^a   Barjon, J ^a   Duboz, J Y ^a   Massies, J ^a   Ulloa, J M ^b   Montes, M ^b   Hierro, A ^b  

^a CNRS   (France)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CURRENT DENSITY; ELECTRIC RESISTANCE; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; X RAY DIFFRACTION;

ACTIVE ZONE; HIGH TEMPERATURE GROWTH; NON-RADIATIVE CHANNELS; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 19944393234     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050487     Document Type: Article

References (11)

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