Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3 μm

IEEE Photonics Technology Letters

Volumn 18, Issue 9, 2006, Pages 1070-1072

  Schulz, N ^a   Rattunde, M ^a   Manz, C ^a   Kohler K ^a   Wild, C ^a   Wagner, J ^a   Beyertt, S S ^b   Brauch, U ^b   Kubler T ^b   Giesen, A ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

GaInAsSb; Infrared; Single mode; Vertical external cavity surface emitting laser (VECSEL)

Indexed keywords

BEAM PROFILE ANALYSIS; CHEMICAL VAPOR DEPOSITION DIAMOND; CONTINUOUS WAVES; GAINASSB; HEAT SPREADERS; INTRACAVITIES; LASER CHIPS; LASER EMISSION; LOW THERMAL CONDUCTIVITY; MULTI-TRANSVERSE MODE; OPTICALLY PUMPED; OUTPUT POWER; POLYCRYSTALLINE; PUMP POWER; SINGLE MODE; TEM; TOP SURFACE; VECSEL; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER;

FIBER LASERS; GALLIUM ALLOYS; INFRARED LASERS; SURFACE EMITTING LASERS;

PUMPING (LASER);

EID: 33749413069     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.873360     Document Type: Article

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