1 W at 617 nm generation by intracavity frequency conversion in semiconductor disk laser

Electronics Letters

Volumn 43, Issue 18, 2007, Pages 980-981

  Rautiainen, J ^a   Harkonen A ^a   Tuomisto, P ^a,b   Konttinen, J ^a,b   Orsila, L ^a   Guina, M ^a   Okhotnikov, O G ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^b EpiCrystals Inc   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CRYSTAL STRUCTURE; SEMICONDUCTING GALLIUM ARSENIDE;

INTRACAVITY FREQUENCY CONVERSION; SEMICONDUCTOR DISK LASER;

SEMICONDUCTOR LASERS;

EID: 34548312278     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20071654     Document Type: Article

References (5)

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3. Fan, L., Hsu, T.-C., Fallahi, M., Murray, J.T., Bedford, R., Kaneda, Y., Hader, J., Zakharian, A.R., Moloney, J.V., Koch, S.W., and Stolz, W.: ' Tunable watt-level blue-green vertical-external-cavity surface-emitting lasers by intracavity frequency doubling ', Appl. Phys. Lett., 2006, 88, p. 251117 10.1063/1.2215635 0003-6951
4. Gerster, E., Ecker, I., Lorch, S., Hahn, C., Menzel, S., and Unger, P.: ' Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser ', J. Appl. Phys., 2003, 94, p. 7397-7401 10.1063/1.1625784 0021-8979
5. Härkönen, A., Rautiainen, J., Guina, M., Konttinen, J., Tuomisto, P., Orsila, L., Pessa, M., and Okhotnikov, O.G.: ' High power frequency doubled GaInNAs semiconductor disk laser emitting at 615nm ', Opt. Express, 2007, 15, p. 3224-3229 1094-4087