High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM 00 beams

IEEE Photonics Technology Letters

Volumn 9, Issue 8, 1997, Pages 1063-1065

  Kuznetsov, M ^a,b,c   Hakimi, F ^b,d   Sprague, R ^b,e   Mooradian, A ^b,f  

^a IEEE   (United States)

^b Micracor Inc   (United States)

^c RAYTHEON COMPANY   (United States)

^d MIT LINCOLN LABORATORY   (United States)

^e Barr Associates   (United States)

^f AMTEK   (United States)

Author keywords

Optical beams; Optical fiber amplifiers; Optical fiber communication; Optical fiber coupling; Optical pumping; Quantum well lasers; Semiconductor lasers

Indexed keywords

CONTINUOUS WAVE LASERS; ELECTROMAGNETIC WAVE DIFFRACTION; HIGH POWER LASERS; LASER BEAMS; LASER MODES; OPTICAL COMMUNICATION; OPTICAL FIBER COUPLING; OPTICALLY PUMPED LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES;

TRANSVERSE ELECTROMAGNETIC (TEM) MODE; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSEL);

QUANTUM WELL LASERS;

EID: 0031208646     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.605500     Document Type: Article

References (9)

1. M. Sagawa, T. Toyonaka, K. Hiramoto, K. Shinoda, and K. Uomi, "High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 189-794, 1995.
2. Z. L. Liau, J. N. Walpole, J. C. Livas, E. S. Kintzer, D. E. Mull, L. J. Missaggia, and W. F. DiNatale, "Fabrication of two-sided anamorphic microlenses and direct coupling of tapered high-power diode laser to single-mode fiber," IEEE Photon. Technol. Lett., vol. 7, pp. 1315-1317, 1995.
3. D. B. Young, J. W. Scott, F. H. Peters, M. G. Peters, M. L. Majewski, B. J. Thibeault, S. W. Corzine, and L. A. Coldren, "Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers," IEEE J. Quantum Electron., vol. 29, pp. 2013-2021, 1993.
4. B. Weigl, M. Grabherr, R. Michalzik, G. Reinger, and K. J. Ebeling, "High-power single-mode selectively oxidized vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 8, pp. 971-973, 1996.
5. M. A. Hadley, G. C. Wilson, K. Y. Lau, and J. S. Smith, "High single-transverse-mode output from external-cavity surface-emitting laser diodes," Appl. Phys. Lett., vol. 63, pp. 1607-1609, 1993.
6. J. J. Zayhowski and A. Mooradian, "Single-frequency microchip Nd lasers," Opt. Lett., vol. 14, pp. 24-26, 1989.
7. A. Mooradian, "External cavity semiconductor laser," U.S. Patent 5 131 002.
8. H. Q. Le, W. D. Goodhue, P. A. Maki and S. Di Cecca, "Diode-laser-pumped InGaAs/GaAs/AlGaAs heterostructure lasers with low internal loss and 4-W average power," Appl. Phys. Lett., vol. 63, pp. 1465-1467 1993.
9. J. V. Sandusky and S. R. J. Brueck, "A CW external-cavity surface-emitting laser," IEEE Photon. Technol. Lett., vol. 8, pp. 313-315, 1996.