Effect of the cavity resonance-gain offset on the output power characteristics of gasb-based vecsels

IEEE Photonics Technology Letters

Volumn 19, Issue 21, 2007, Pages 1741-1743

  Schulz, N ^a   Rattunde, M ^a   Ritzenthaler, C ^a   Rosener B ^a   Manz, C ^a   Kohler K ^a   Wagner, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

GaInAsSb; Infrared; Vertical external cavity surface emitting laser (VECSEL)

Indexed keywords

ACTIVE REGIONS; CAVITY RESONANCES; GAIN SPECTRA; GAINASSB; HIGH-POWER; INTRACAVITIES; KEY PARAMETERS; MAXIMUM OUTPUT POWER; OUTPUT POWER; PEAK EMISSION WAVELENGTH; PUMP POWER; QUANTUM WELL; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; THERMAL LIMITATIONS; THERMAL ROLLOVER; THERMO-OPTICAL; VECSEL; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER;

CAVITY RESONATORS; INFRARED LASERS; RESONANCE; SURFACE EMITTING LASERS;

FIBER LASERS;

EID: 38349045705     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.906054     Document Type: Article

References (12)

1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, "Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external- cavity surface-emitting semiconductor lasers with circular TEM beams," IEEE J. Quantum Electron., vol.5, no.3, pp. 561-573, Mar. 1999.
2. S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, and W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett., vol.82, no.21, pp. 3620-3622, 2003.
3. J.-Y. Kim, S. Cho, J. Lee, G. B. Kim, S.-J. Lim, J. Yoo, K.-S. Kim, S.-M. Lee, J. Shim, T. Kim, and Y. Park, "A measurement of modal gain profile and its effect on the lasing performance in vertical-externalcavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol.18, no.23, pp. 2496-2498, Dec. 1, 2006.
4. A. Ouvrard, A. Garnache, L. Cerutti, F. Genty, and D. Romanini, "Single-frequency tunable Sb-based VCSELs emitting at 2.3μm," IEEE Photon. Technol. Lett., vol.17, no.10, pp. 2020-2022, Oct. 2005.
5. N. Schulz, M. Rattunde, C. Manz, K. Köhler, C.Wild, J.Wagner, S.-S. Beyertt, U. Brauch, T. Kübler, and A. Giesen, "Optically pumped GaSb-based VECSEL emitting 0.6 W at 2.3μm," IEEE Photon. Technol. Lett., vol.18, no.9, pp. 1070-1072, May 1, 2006.
6. A. Härkönen, M. Guina, O. Okhotnikov, K. Rößner, M. Hümmer, T. Lehnhardt, M. Müller, A. Forchel, and M. Fischer, "1-W antimonidebased vertical external cavity surface emitting laser operating at 2-μm," Opt. Express, vol.14, no.14, pp. 6479-6484, 2006.
7. J. Wagner, N. Schulz, M. Rattunde, C. Ritzenthaler, C. Manz, C.Wild, and K. Köhler, "Barrier- and in-well pumped GaSb-based 2.3μm VECSELs," Phys. Stat. Sol. (c), vol.4, no.5, pp. 1597-1600, 2007.
8. B. Tell, K. F. Brown-Goebeler, R. E. Leibenguth, F. M. Baez, and Y. H. Lee, "Temperature dependence of GaAs-AlGaAs vertical cavity surface emitting lasers," Appl. Phys. Lett., vol.60, no.10, pp. 683-685, 1992.
9. D. B. Young, J. W. Scott, F. H. Peters, M. G. Peters, M. L. Majewski, B. J. Thibeault, S. W. Corzine, and L. A. Coldren, "Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers," IEEE J. Quantum Electron., vol.29, no.6, pp. 2013-2022, Jun. 1993.
10. Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett., vol.77, no.5, pp. 651-653, 2000.
11. M. Rattunde, C. Mermelstein, J. Schmitz, R. Kiefer, W. Pletschen, M. Walther, and J. Wagner, "Comprehensive modeling of the electro-optical- thermal behavior of (AlGaIn)(AsSb)-based 2.0μm diode lasers," Appl. Phys. Lett., vol.80, no.22, pp. 4085-4087, 2002.
12. D. Garbuzov, M. Maiorov, H. Lee, V. Khalfin, R. Martinelli, and J. Connolly, "Temperature dependence of continuouswave threshold current for 2.3-2.6μm InGaAsSb/AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers," Appl. Phys. Lett., vol.74, no.20, pp. 2990-2992, 1999.