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Volumn 15, Issue 6, 2007, Pages 3224-3229

High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; LIGHT EMISSION; OPTICAL PUMPING; POWER ELECTRONICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33947382619     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.15.003224     Document Type: Article
Times cited : (32)

References (10)
  • 2
    • 0038646069 scopus 로고    scopus 로고
    • 8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm
    • S. Lutgen, T. Albrecht, P. Brick, W. Reill, J. Luft, W. Späth, "8-W high-efficiency continuous-wave semiconductor disk laser at 1000 nm," Appl. Phys. Lett. 82, 3620-3622 (2003).
    • (2003) Appl. Phys. Lett , vol.82 , pp. 3620-3622
    • Lutgen, S.1    Albrecht, T.2    Brick, P.3    Reill, W.4    Luft, J.5    Späth, W.6
  • 7
    • 0346935298 scopus 로고    scopus 로고
    • Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser
    • E. Gerster, I. Ecker, S. Lorch, C. Hahn, S. Menzel, and P. Unger, "Orange-emitting frequency-doubled GaAsSb/GaAs semiconductor disk laser," J. Appl. Phys. 94, 7397-7401 (2003).
    • (2003) J. Appl. Phys , vol.94 , pp. 7397-7401
    • Gerster, E.1    Ecker, I.2    Lorch, S.3    Hahn, C.4    Menzel, S.5    Unger, P.6
  • 9
    • 0001420362 scopus 로고    scopus 로고
    • Semiconductor wafer bonding via liquid capillarity
    • Z. L. Liau, "Semiconductor wafer bonding via liquid capillarity," Appl. Phys. Lett. 77, 651-653 (2000).
    • (2000) Appl. Phys. Lett , vol.77 , pp. 651-653
    • Liau, Z.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.