Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga(In)NAs barrier and space layer

Applied Physics Letters

Volumn 83, Issue 24, 2003, Pages 4951-4953

  Liu, H Y ^a   Hopkinson, M ^a   Navaretti, P ^a   Gutierrez, M ^a   Ng, J S ^a   David, J P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; HETEROJUNCTIONS; INTERFACES (MATERIALS); LIGHT SOURCES; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

EMISSION LINEWIDTH; PHOTOLUMINESCENCE EFFICIENCY; SPACE LAUER;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0347133603     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632027     Document Type: Article

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