Derivation of a 10-band k · p model for dilute nitride semiconductors

Solid-State Electronics

Volumn 47, Issue 3, 2003, Pages 443-446

  Lindsay, A ^a,b   Tomic S ^a   O'Reilly, E P ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Band anti crossing; GaNAs; k p method; Quantum wells

Indexed keywords

BAND STRUCTURE; ELECTRONIC STRUCTURE; GREEN'S FUNCTION; HAMILTONIANS; SEMICONDUCTING GALLIUM COMPOUNDS;

CONDUCTION BANDS;

HETEROJUNCTIONS;

EID: 0037345247     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00386-6     Document Type: Conference Paper

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