Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4649, Issue , 2002, Pages 265-271

  Müller, Moritz I ^a,c   Linder, Norbert ^a   Karnutsch, Christian ^a   Schmid, Wolfgang ^a   Streubel, Klaus ^a   Luft, Johann ^a   Beyertt, Svent Simon ^b   Giesen, Adolf ^b   Döhler, Gottfried H ^c  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

AlGaInP; External cavity laser; Optically pumped semiconductor laser; Thin disk semiconductor laser with external cavity; VECSEL

Indexed keywords

ELECTRIC FIELD EFFECTS; EMISSION SPECTROSCOPY; GAIN MEASUREMENT; LIGHT ABSORPTION; LIGHT EMISSION; LIGHT REFLECTION; OPTICAL PUMPING; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

ARGON LASER; DIFFERENTIAL QUANTUM EFFICIENCY; EXTERNAL CAVITY LASER; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0036407561     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.469242     Document Type: Article

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