High-power high-brightness operation of a 2.25-μm (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser

IEEE Photonics Technology Letters

Volumn 20, Issue 7, 2008, Pages 502-504

  Rosener B ^a   Schulz, N ^a   Rattunde, M ^a   Manz, C ^a   Kohler K ^a   Wagner, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Beam quality; GaInAsSb; Infrared; Optically pumped semiconductor disk laser (OPSDL); Vertical external cavity surface emitting laser (VECSEL)

Indexed keywords

BEAM DIAMETERS; BEAM PROFILE ANALYSIS; BEAM PROFILES; BEAM PROPAGATION FACTOR; CONTINUOUS WAVES; GAINASSB; GAUSSIANS; HEAT SPREADERS; HIGH BRIGHTNESS; HIGH-POWER; HIGH-POWER OPERATION; MAXIMUM OUTPUT POWER; MODAL GAIN; OPTICALLY PUMPED; OPTICALLY PUMPED SEMICONDUCTOR DISK LASER (OPSDL); OPTICALLY PUMPED SEMICONDUCTOR DISK LASERS; OUTPUT POWER; PRECISE CONTROL; ROOM TEMPERATURE; SECOND ORDER MOMENT; TEM; TEMPERATURE DEPENDENT; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER; GALNASSB; INFRARED;

DISKS (STRUCTURAL COMPONENTS); FIBER LASERS; GAUSSIAN BEAMS; INFRARED LASERS; SEMICONDUCTOR LASERS; SILICON CARBIDE; SURFACE EMITTING LASERS;

PUMPING (LASER);

EID: 61349167382     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.918874     Document Type: Article

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