Present status and prospect of Si wafers for ultra large scale integration

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 7 A, 2004, Pages 4055-4067

  Tsuya, Hideki ^a  

^a NONE   (Japan)

Author keywords

300mm wafer; Annealed wafer; Bonding soi; COP; Epitaxial wafer; Gettering; Grown in defect; Particle; SFQR; Si wafer; SIMOX; SOI; Strained sige; ULSI

Indexed keywords

BONDING; CHARGE COUPLED DEVICES; CHEMICAL MECHANICAL POLISHING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DYNAMIC RANDOM ACCESS STORAGE; EPITAXIAL GROWTH; MOSFET DEVICES; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SURFACE TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; ULSI CIRCUITS;

300 MM WAFERS; ANNEALED WATER; BONDING SOI; CRYSTAL ORIGINATED PARTICLES (COP); EPITAXIAL WAFERS; GETTERING; SFQR; SILICON ON INSULATORS (SOI); SIMOX; STRAINED SIGE;

SILICON WAFERS;

EID: 4644304301     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.4055     Document Type: Review

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