Dislocation-free Czochralski Si crystal growth without Dash necking using a heavily B and Ge codoped Si seed

Japanese journal of applied physics

Volumn 39, Issue 11 B, 2000, Pages

  Huang, Xinming ^a   Taishi, Toshinori ^a   Yonenaga, Ichiro ^b   Hoshikawa, Keigo ^a  

^a SHINSHU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); LATTICE CONSTANTS; SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; THERMAL EFFECTS; X RAY CRYSTALLOGRAPHY;

DASH NECKING; THERMAL SHOCKS;

SEMICONDUCTING SILICON;

EID: 0034316090     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l1115     Document Type: Article

References (11)

1. W. C. Dash: J. Appl. Phys. 30 (1959) 459.
2. W. C. Dash: J. Appl. Phys. 31 (1960) 736.
3. H. Yamagishi, H. Minami, M. Imai, T. Misawa and K. Takada: Proc. 2nd Int. Symp. Advanced Science & Technology of Si Materials, Kona, Hawaii, U.S.A., 1996, p. 59.
4. K. Hoshikawa, X. Huang, T. Taishi, T. Kajigaya and T. Iino: Jpn. J. Appl. Phys. 38 (1999) L1369.
5. X. Huang, T. Taishi, I. Yonenaga and K. Hoshikawa: J. Cryst. Growth 213 (2000) 283.
6. T. Taishi, X. Huang, T. Fukami and K. Hoshikawa: Jpn. J. Appl. Phys. 39 (2000) L191.
7. X. Huang, T. Taishi, I. Yonenaga and K. Hoshikawa: submitted to Jpn. J. Appl. Phys.
8. K. M. Kim and P. Smetana: J. Cryst. Growth 100 (1990) 527.
9. R. W. Olesinski and G. J. Abbaschian: Bull. Alloy Phase Diag. 5 (1984) 180.
10. F. A. Trumbore: Bell Syst. Tech. J. 39 (1960) 205.
11. L. Vegard: Z. Phys. 5 (1921) 17.