Processing and Characterization of 300 mm Argon-Annealed Wafers

Solid State Phenomena

Volumn 95-96, Issue , 2004, Pages 105-110

  Muller T ^a   Daub, E ^a   Yokota, H ^b   Wahlich, R ^a   Krottenthaler, P ^a   Ammon, W V ^a  

^a SILTRONIC AG   (Germany)

^b Wacker NSCE Corporation   (Japan)

Author keywords

Argon Anneal; Nitrogen Doping; OPP; Pulling Conditions; Slip

Indexed keywords

ANNEALING; ARGON; CHEMICAL VAPOR DEPOSITION; COMPUTERIZED TOMOGRAPHY; COOLING; CRYSTAL DEFECTS; CRYSTAL GROWTH; DOPING (ADDITIVES); MORPHOLOGY; OPTICAL MICROSCOPY; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; STRESS ANALYSIS;

PULLING CONDITIONS; THERMAL PROCESSES;

SILICON WAFERS;

EID: 1642479262     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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