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Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 53-62

Gettering in advanced low temperature processes

(7) Sadamitsu, S a Ogushi, S a Koike, Y a Reilly, N a Nagashima, T a Sano, M a Tsuya, H a

a SUMCO CORPORATION (Japan)

Author keywords

Epitaxial Wafer; Gettering; Low Temperature Process; Metal Impurities; Silicon

Indexed keywords

ANNEALING; CONTAMINATION; IRON; LOW TEMPERATURE OPERATIONS; MORPHOLOGY; OXYGEN; THERMAL EFFECTS; VACUUM APPLICATIONS; GETTERS; ISOTHERMAL ANNEALING; ISOTHERMS; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; TEMPERATURE;

INTRINSIC GETTERING;

SILICON WAFERS;

DEPOSITION TEMPERATURES; EPITAXIAL WAFERS; GETTERING; ISOTHERMAL ANNEALINGS; LOW- TEMPERATURE PROCESS; METAL IMPURITIES; OXYGEN PRECIPITATES; PROCESS TEMPERATURE;

EID: 4243220366 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.57-58.53 Document Type: Article

Times cited : (12)

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