Formation of grown-in defects during Czochralski silicon crystal growth

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 11, 1997, Pages 6595-6600

  Nishikawa, Hideshi ^a   Tanaka, Tadami ^a   Yanase, Yoshio ^a   Hourai, Masataka ^a   Sano, Masakazu ^a   Tsuya, Hideki ^a  

^a SUMCO CORPORATION   (Japan)

Author keywords

AFM; COP; Czochralski silicon; GOI; Grown in defect; OPP; Vacancy

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL MICROSTRUCTURE; DIFFUSION IN SOLIDS; FILM GROWTH; GATES (TRANSISTOR); OXIDES; QUENCHING; RADIATION COUNTERS; THERMAL EFFECTS;

GATE OXIDE INTEGRITY (GOI); OPTICAL PRECIPITATE PROFILERS;

SEMICONDUCTING SILICON;

EID: 0031273948     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6595     Document Type: Article

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