Precise thickness control for ultra-thin SOI in ELTRAN® SOI-EPI™ wafer

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 209-210

  Sato, Nobuhiko ^a   Kakizaki, Y ^a   Atoji, T ^a   Notsu, K ^a   Miyabayashi, H ^a   Ito, M ^a   Yonehara, T ^a  

^a CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; EPITAXIAL GROWTH; SEMICONDUCTOR DOPING; SILICON WAFERS; THRESHOLD VOLTAGE; ULTRATHIN FILMS;

DEPLETED OPERATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036456566     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. International Technology Roadmap for Semi-conductor 2001 Edition (Semiconductor Industry Association, 2001) p. 7 (Front End Process).
2. http://www.canon.com/eltran.
3. Y. Kakizaki, and N. Sato, Report of NEDO Project of R/D of Ultra low power LSI for information terminal (JEITA, 2002) p. 201.
4. N. Sato, and T. Yonehara, Appl. Phys. Lett. 65 (1994) p. 1924.