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Volumn 273-274, Issue , 1999, Pages 441-444

Experiments and computer simulations of iron profiles in p/p+ silicon: Segregation and the position of the iron donor level

(5) Hieslmair, H a Istratov, A A a Flink, C a McHugo, S A a Weber, E R a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CONTAMINATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; ENERGY GAP; IRON; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR DOPING;

IRON DONOR TRAP LEVEL;

SEMICONDUCTING SILICON;

EID: 0033322180 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(99)00500-1 Document Type: Article

Times cited : (26)

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14
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.