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Volumn 40, Issue 10 B, 2001, Pages
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Formation of buried oxide layer in Si substrates by oxygen precipitation at implantation damage of light ions
a
a
NEC CORPORATION
(Japan)
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Author keywords
BOX; Implantation damage; Precipitation; SIMOX; SOI
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Indexed keywords
ANNEALING;
HIGH TEMPERATURE EFFECTS;
ION IMPLANTATION;
NUCLEATION;
PRECIPITATION (CHEMICAL);
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
HIGH TEMPERATURE ANNEALING;
LIGHT IONS;
SILICON ON FABRICATION TECHNIQUE;
SEMICONDUCTING SILICON;
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EID: 0035888702
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.l1075 Document Type: Letter |
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Times cited : (9)
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References (11)
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