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Volumn 147, Issue 3, 2000, Pages 1199-1203

Dependence of epitaxial layer defect morphology on substrate particle contamination of Si epitaxial wafer

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEPOSITION; EPITAXIAL GROWTH; MORPHOLOGY; PARTICLE SIZE ANALYSIS; STACKING FAULTS; SUBSTRATES;

EID: 0033873399     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393336     Document Type: Article
Times cited : (14)

References (12)
  • 3
    • 0029488585 scopus 로고
    • ICDS-18, M. Suezawa and H. Katayama-Yoshida, Editors, Trans Tech Publications, Zuerich-Uetikon
    • Y. Kitagawara, K. Aihara, S. Oka, and T. Takenaka, in Materials Science Forum, Vols. 196-201, ICDS-18, M. Suezawa and H. Katayama-Yoshida, Editors, p. 1835. Trans Tech Publications, Zuerich-Uetikon (1995).
    • (1995) Materials Science Forum , vol.196-201 , pp. 1835
    • Kitagawara, Y.1    Aihara, K.2    Oka, S.3    Takenaka, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.