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Volumn 35, Issue 11, 1996, Pages 5597-5601

Transmission electron microscope observation of "IR scattering defects" in As-grown Czochralski Si crystals

Author keywords

Czochralski Si; Grown in defect; IR scattering defect; TEM

Indexed keywords

ENERGY DISPERSIVE X RAY SPECTROMETRY; FOCUSED ION BEAM; GROWN IN DEFECT; INFRARED LASER SCATTERING TOMOGRAPHY;

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; NANOSTRUCTURED MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON;

EID: 0030286911 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.5597 Document Type: Article

Times cited : (148)

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