Oxygen precipitation behavior and internal gettering in epitaxial and polished Czochralski silicon wafers

Diffusion and Defect Data Pt.B: Solid State Phenomena

Volumn 69, Issue , 1999, Pages 63-72

  Sueoka, K ^a   Akatsuka, M ^a   Yonemura, M ^a   Sadamitsu, S ^a   Asayama, E ^a   Ono, T ^a   Koike, Y ^a   Katahama, H ^a  

^a Sumitomo Metal Industries Limited   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; EPITAXIAL GROWTH; ETCHING; NUCLEATION; PRECIPITATION (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

INTERNAL GETTERING;

SILICON WAFERS;

EID: 0032685535     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (25)

1. S. Sadamitsu, S. Ogushi, Y. Koike, N. Reilly, T. Nagashima, M. Sano and H. Tsuya, Solid State Phenomena 57-58 (1997), p.53.
2. H. Tsuya, Semiconductor Silicon/1986, H.R. Huff, T. Abe and B.O. Kolbesen, Editors, The Electrochem. Soc., Pennington, NJ (1986), p.849.
3. C.W. Pearce and G.A. Rozgonyi, VLSI Science and Technology/1982, C.J. Dell'Oco and W.M. Bullis, Editors, The Electrochem. Soc., Pennington, NJ (1982), p.53.
4. W. Wijaranakula, J.H. Matlock, H. Mollenkopf, P. Burke and L. Forbes, J. Electrochem. Soc., 134 (1987), 2310.
5. H. Takeno, K. Aihara, Y. Hayamizu and Y. Kitagawara, Semiconductor Silicon/1998, H.R. Huff, U. Gösele and H. Tsuya, Editors, The Electrochem. Soc., Pennington, NJ (1998), p.1012.
6. E. Asayama, T. Ono, M. Takeshita, M. Hourai, M. Sano and H. Tsuya, Semiconductor Silicon/1998, H.R. Huff, U. Gösele and H. Tsuya, Editors, The Electrochem. Soc., Pennington, NJ (1998), p.546.
7. F. Shimura, W. Dyson, J.W. Moody and R.S. Hocket, VLSI Science and Technology/1985, W.M. Bullis and S. Broydo, Editors, The Electrochem. Soc., Pennington, NJ (1985), p.507.
8. th Autumn Meeting, Japan Society of Applied Physics, (1997), p.243.
9. K. Wada and N. Inoue, Semiconductor Silicon/1986, H.R. Huff, T. Abe and B.O. Kolbesen, Editors, The Electrochem. Soc., Pennington, NJ (1986), p.778.
10. D.A.P. Bulla, W.E. Castro, Jr., V. Stojanoff, F.A. Ponce, S. Hahn and W.A. Tiller, J. Cryst. Growth, 85 (1987), 91.
11. J. Vanhellemont and C. Claeys, J. Appl. Phys., 62 (1987), 3960; ibid., 71 (1992), 1073.
12. J. Vanhellemont and C. Claeys, J. Appl. Phys., 62 (1987), 3960; ibid., 71 (1992), 1073.
13. J. Burke, The Kinetics of Phase Transformations in Metals, Pergamon, Oxford (1965), p.166.
14. J. Vanhellemont, Appl. Phys. Lett., 78 (1995), 4297.
15. K. Sueoka, N. Ikeda, T. Yamamoto and S. Kobayashi, J. Appl. Phys., 74 (1993), 5437.
16. CRC Handbook of Materials Science, Vol.III Nonmetallic Materials and Applications, C.T. Lynch, Editor, CRC Press, Boca Raton, FL (1984), p.140.
17. R.A. Craven, Semiconductor Silicon/1981, H.R. Huff, R.J. Kriegler and Y. Takeishi, Editors, The Electrochem. Soc., Pennington, NJ (1981), p.254.
18. J.C. Mikkelsen, Mater. Res. Soc. Symp. Proc., 59 (1986), p.19.
19. S. Sadamitsu, Dr. Thesis, Oaska University, (1997), p.38.
20. F.S. Ham, J. Phys. Chem. Solids, 6 (1958), 335.
21. E.R. Weber, Appl. Phys. A, 30 (1983), 1.
22. H. Hieslmair, A.A. Istratov, S.A. McHugo, C. Flink and E.R. Weber, Semiconductor Silicon/1998, H.R. Huff, U. Gösele and H. Tsuya, Editors, The Electrochem. Soc., Pennington, NJ (1998), p.1126.
23. M. Schrems, T. Brabec, M. Budil, H. Potzl, E. Guerrero, D. Huber and P. Pongratz, Mater. Sci. Eng., B4 (1989), 393.
24. S. Kobayashi, J. Cryst. Growth, 174 (1997), 163.
25. H. Takeno, T. Otogawa and Y. Kitagawara, J. Electrochem. Soc., 144 (1997), 4340.