The analysis of the defective cells induced by COP in a 0.3-micron-technology node DRAM

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1240-1243

  Muranaka, Masaya ^a   Makabe, Kazuya ^a   Miura, Masashi ^a   Kato, Hideaki ^a   Ide, Seihachi ^a   Iwai, Hidetoshi ^a   Kawamura, Masao ^a   Tadaki, Yoshitaka ^a   Ishihara, Masamichi ^a   Kaeriyama, Toshiyuki ^a  

^a HITACHI LTD   (Japan)

Author keywords

Crystal originated pit; Czohochralski; Defect density; Dynamic random access memory; Epitaxy; Field oxide; Impurities concentration; Isolation characteristics; Metal oxide semiconductor

Indexed keywords

EID: 0001081139     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1240     Document Type: Article

References (3)

1. M. Itsumi, H. Akiya, T. Ueki, M. Tomita and M. Yamawaki: Jpn. J. Appl. Phys. 35 (1996) 812.
2. M. Kato, T. Yoshida, Y. Ikeda and Y. Kitagawara: Jpn. J. Appl. Phys. 35 (1996) 5597.
3. S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons Inc., New York, 1981) p. 446.