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Applied Physics Letters

Volumn 72, Issue 26, 1998, Pages 3485-3487

SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen

(4) Fukatsu, S a Ishikawa, Yukari b Saito, T b Shibata, N b

a UNIVERSITY OF TOKYO (Japan)

b JAPAN FINE CERAMICS CENTER (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000360476 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.121674 Document Type: Article

Times cited : (66)

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