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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 3 B, 2003, Pages

Quantitative detection of small amount of nitrogen in Czochralski-grown silicon crystals

(2) Ono, Haruhiko a,c Horikawa, Mitsuhiro b

a NEC CORPORATION (Japan)

b Elpida Memory Inc (Japan)

c JAPAN FINE CERAMICS CENTER (Japan)

Author keywords

Concentration; Czochralski grown; Electronic transition; Infrared absorption; Nitrogen; Silicon

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; HYDROGEN; INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; NITROGEN; SEMICONDUCTOR DOPING;

ELECTRONIC TRANSITION; QUANTITATIVE DETECTION;

SILICON WAFERS;

EID: 0038361042 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.l261 Document Type: Letter

Times cited : (22)

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