Low-cost p-p- epitaxial silicon wafers for densely packed metal-oxide-semiconductor devices

Journal of the Electrochemical Society

Volumn 147, Issue 5, 2000, Pages 1930-1935

  Shimizu, Hirofumi ^a   Satoh, Tomomi ^b   Muranaka, Masaya ^b   Makabe, Kazuya ^b   Miura, Masashi ^b  

^a NIHON UNIVERSITY   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CURRENT VOLTAGE CHARACTERISTICS; DYNAMIC RANDOM ACCESS STORAGE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOS CAPACITORS; SCANNING ELECTRON MICROSCOPY; THIN FILMS; X RAY SPECTROSCOPY;

CRYSTAL ORIGINATED PARTICLES; TOTAL REFLECTION X RAY FLUORESCENCE;

SILICON WAFERS;

EID: 0033729191     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393460     Document Type: Article

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