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Journal of the Electrochemical Society

Volumn 149, Issue 4, 2002, Pages

Defects in silicon crystals and their impact on DRAM device characteristics

(3) Dornberger, E a Temmler, D b Von Ammon, W a

a SILTRONIC AG (Germany)

b INFINEON TECHNOLOGIES AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALS; DENSITY (SPECIFIC GRAVITY); DOPING (ADDITIVES); DYNAMIC RANDOM ACCESS STORAGE; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; NITROGEN; SILICON WAFERS; SUBSTRATES;

CRYSTAL ORIGINATED PITS; HIGH TEMPERATURE WAFER ANNEALING; NITROGEN-DOPED CRYSTALS; OCTAHEDRAL VACANCY AGGREGATES;

POINT DEFECTS;

EID: 0036530397 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1454141 Document Type: Article

Times cited : (39)

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