High-rate, low-temperature synthesis of composition controlled hydrogenated amorphous silicon carbide films in low-frequency inductively coupled plasmas

Journal of Physics D: Applied Physics

Volumn 41, Issue 5, 2008, Pages

  Cheng, Qijin ^a   Xu, S ^a   Long, J D ^a   Ni, Z H ^b   Rider, A E ^c   Ostrikov, K ^a,c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DILUTION; INDUCTIVELY COUPLED PLASMA; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SYNTHESIS (CHEMICAL);

COMPETITIVE DEPOSITION RATES; HEAVY HYDROGEN DILUTION; PLASMA DISCHARGES; STATIC DISORDER MODEL;

THIN FILMS;

EID: 42549090157     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/5/055406     Document Type: Article

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