Influence of hydrogen dilution on the growth of nanocrystalline silicon carbide films by low-frequency inductively coupled plasma chemical vapor deposition

Thin Solid Films

Volumn 516, Issue 18, 2008, Pages 5991-5995

  Cheng, Qijin ^a,b   Xu, S ^a,b   Chai, J W ^a,b   Huang, S Y ^a,b   Ren, Y P ^a,b   Long, J D ^a,b   Rutkevych, P P ^a,b   Ostrikov, K ^b,c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c UNIVERSITY OF SYDNEY   (Australia)

Author keywords

Cubic silicon carbide; Hexagonal silicon carbide; ICPCVD; Scanning electron microscopy; X ray diffraction

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DILUTION; FEEDSTOCKS; FILM GROWTH; HYDROGEN; INDUCTIVELY COUPLED PLASMA; NANOCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

CUBIC SILICON CARBIDE; FEEDSTOCK GASES; HEXAGONAL STRUCTURES; ICPCVD; INDUCTIVELY COUPLED PLASMA CHEMICAL VAPOR DEPOSITION;

THIN FILMS;

EID: 44449170019     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.091     Document Type: Article

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