Temperature dependence of photoluminescence in amorphous Si 1-xCx:H films

European Physical Journal B

Volumn 51, Issue 1, 2006, Pages 61-64

  Rerbal, K ^a   Solomon, I ^a   Chazalviel, J N ^a   Ozanam, F ^a  

^a LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; GLOW DISCHARGES; INFRARED SPECTROSCOPY; PHOTOLUMINESCENCE; SILICON ALLOYS;

PHOTOCARRIERS; RADIATIVE RECOMBINATION PROCESS; SILICON CARBON ALLOYS; TEMPERATURE DEPENDENCE;

AMORPHOUS FILMS;

EID: 33744797923     PISSN: 14346028     EISSN: 14346036     Source Type: Journal    
DOI: 10.1140/epjb/e2006-00198-5     Document Type: Article

References (16)

1. J. Bullot, M.P. Schmidt, Phys. Status Solidi (b) 143, 345 (1987)
2. L.R. Tessler, I. Solomon, Phys. Rev. B 52, 10962 (1995)
3. I. Solomon, M.P. Schmidt, H. Tran-Quoc, Phys. Rev. B 38, 9895 (1988)
4. I. Solomon, M.P. Schmidt, C. Senemaud, M. Driss-Khodja, J. Non-Cryst. Solids 97, 1091 (1987)
5. R.W. Collins, M.A. Paesler, W. Paul, Solid State Commun. 34, 833 (1980)
6. R. A. Street, Hydrogenated amorphous silicon (Cambridge Solid State Science Series, Cambridge, UK, 1991)
7. D.J. Dunstan, F. Boulitrop, Phys. Rev. B 28, 5923 (1983)
8. R.A. Street, Adv. Phys. 30, 593 (1981)
9. W. Shockley, W.T. Reed, Phys. Rev. 87, 835 (1952)
10. L.R. Tessler, Solid State Commun. 111, 193 (1999)
11. T. Muschik, R. Schwartz, J. Non-Cryst. Solids 164-166, 619 (1993)
12. R.B. Wehrspohn, J.-N. Chazalviel, F. Ozanam, I. Solomon, Eur. Phys. J. B 8, 179 (1999)
13. K. Rerbal, J.-N. Chazalviel, F. Ozanam, I. Solomon, Phys. Rev. B 66, 184209 (2002)
14. S. Liedtke, K. Lips, M. Bort, K. Jahn, W. Fuhs, J. Non-Cryst. Solids 114, 522 (1989)
15. D. Monroe, Phys. Rev. Lett. 54, 146 (1985)
16. The corresponding transition temperature for holes is expected to be nearly twice as large, but is unimportant for the luminescence intensity which is limited by electron detrapping as explained in the previous section