SCOPUS 정보 검색 플랫폼

Chemical Vapor Deposition

Volumn 13, Issue 10, 2007, Pages 561-566

Low-temperature PECVD of nanodevice-grade nc-3C-SiC

(4) Cheng, Qijin a Xu, Shuyan a Long, Jidong a Ostrikov, Kostya b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b UNIVERSITY OF SYDNEY (Australia)

Author keywords

Deterministic nanofabrication; Nanocrystalline films; Nanodevice grade materials; Plasma nanotools; Silicon carbide

Indexed keywords

DESORPTION; FILMS; HYDROGEN; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NANOCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; PLASMAS; REFRACTIVE INDEX; SILICON; SILICON CARBIDE; STOICHIOMETRY;

CHEMICAL PURITIES; COMPATIBLE PROCESSES; DETERMINISTIC NANOFABRICATION; FREE SIS; HIGH GROWTH RATES; HYDROGEN ATOMS; NANOCRYSTALLINE FILMS; NANOCRYSTALLINE FRACTIONS; NANODEVICE-GRADE MATERIALS; OPTICAL BANDS; PLASMA PROCESSES; SIC FILMS; SYNTHESIS OF;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 42549118524 PISSN: 09481907 EISSN: 15213862 Source Type: Journal
DOI: 10.1002/cvde.200706624 Document Type: Article

Times cited : (16)

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