Hydrogen elimination and phase transitions in pulsed-gas plasma deposition of amorphous and microcrystalline silicon

Journal of Applied Physics

Volumn 81, Issue 6, 1997, Pages 2847-2855

  Srinivasan, Easwar ^a   Parsons, Gregory N ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000522856     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364309     Document Type: Article

References (37)

1. J. Kanicki, F. R. Libsch, J. Griffith, and R. Polastre, J. Appl. Phys. 69, 2339 (1991).
2. I. W. Wu, A. G. Lewis, T. Y. Huang, and A. Chiang, IEEE Electron Device Lett. 10, 123 (1989).
3. D. H. Choi, S. Imai, and M. Matsumura, Jpn. J. Appl. Phys. 34, 459 (1995).
4. N. H. Nickel, A. Yin, and S. J. Fonash, Appl. Phys. Lett. 65, 3099 (1994).
5. A. Chiang, SPIE Display Technol. 1815, 128 (1992).
6. J. C. Lapp, D. M. Mofatt, W. H. Dumbaugh, P. L. Bocko, and M. Anma, SID 94 Tech. Dig. 851 (1994).
7. G. Liu and S. J. Fonash, Jpn. J. Appl. Phys. 1 30, L269 (1991).
8. M. Mohri, H. Kakinuma, and T. Tsuruoka, IEDM 92 Tech. Dig. 673 (1992).
9. N. Kono, T. Nagahara, K. Fujimoto, Y. Kashiwagi, and H. Kakinoki, Mater. Res. Soc. Symp. Proc. 283, 629 (1993).
10. K. Y. Choi, C. Y. Lee, and C. Lee, Jpn. J. Appl. Phys. 34, 4673 (1995).
11. H. Kakinuma, M. Mohri, and T. Tsuruoka, J. Appl. Phys. 77, 646 (1995).
12. J. R. Abelson, Appl. Phys. A 56, 493 (1993).
13. C. W. Liang, W. C. Chiang, and M. S. Feng, Jpn. J. Appl. Phys. 34, 5943 (1995).
14. A. Matsuda, J. Non-Cryst. Solids 59/60, 767 (1983).
15. C. C. Tsai, R. Thompson, C. Doland, F. A. Ponce, G. B. Anderson, and B. Wacker, Mater. Res. Soc. Symp. Proc. 118, 49 (1988).
16. M. Katiyar, Y. H. Yang, and J. R. Abelson, J. Appl. Phys. 77, 6247 (1995).
17. P. Brogueira, J. P. Conde, S. Arekat, and V. Chu, J. Appl. Phys. 79, 8748 (1996).
18. M. Otobe and S. Oda, Jpn. J. Appl. Phys. 31, 1948 (1992).
19. A. Asano, Appl. Phys. Lett. 56, 533 (1990).
20. S. Koynov, R. Schwarz, T. Fisher, S. Grebner, and H. Munder, Jpn. J. Appl. Phys. 33, 4534 (1994).
21. H. Shirai, B. Drevillon, and I. Shimizu, Jpn. J. Appl. Phys. 33, 5590 (1994).
22. G. N. Parsons, Appl. Phys. Lett. 59, 2546 (1991).
23. E. Srinivasan, D. A. Lloyd, and G. N. Parsons, J. Vac. Sci. Technol. A Jan/Feb (1997).
24. G. Lucovsky, R. J. Nemanich, and J. C. Knights, Phys. Rev. B 19, 2064 (1979).
25. J. N. Heyman, J. W. Ager III, E. E. Haller, N. M. Johnson, J. Walker, and C. M. Doland, Phys. Rev. B 45, 13 363 (1992).
26. G. Lucovsky and W. B. Pollard, in The Physics of Hydrogenated Amorphous Silicon II; Electronic and Vibrational Properties, edited by J. D. Joannopoulos, G. Lucovsky, Topics in Applied Physics (Springer, New York, 1984), Vol. 56, pp. 330-338.
27. R. A. Street, in Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991), pp. 34-44.
28. Y. Kuo and P. M. Kozlowski, Appl. Phys. Lett. 69, 1092 (1996).
29. A. I. Chowdhury, W. W. Read, G. W. Rubloff, L. L. Tedder, and G. N. Parsons, J. Vac. Sci. Technol. B Jan/Feb (1997).
30. G. Turban, Y. Catherine, and B. Grolleau, Thin Solid Films 77, 287 (1981).
31. See, for example, CRC Handbook of Chemistry and Physics (69th ed.) (CRC, Boca Raton, FL, 1988-1989), p. B-231.
32. E. Srinivasan, J. Bordeaux, and G. N. Parsons, Mater. Res. Soc. Symp. Proc. 452 (1996).
33. H. Shirai, J. Hanna, and I. Shimizu, Mater. Res. Soc. Symp. Proc. 219, 643 (1991).
34. N. M. Johnson, S. H. Wolff, C. D. Doland, and J. Walker, Mater. Res. Soc. Symp. Proc. 118, 85 (1988).
35. P. Gupta, V. L. Colvin, and S. M. George, Phys. Rev. B 37, 8234 (1988).
36. E. Srinivasan, H. Yang, and G. N. Parsons, J. Chem. Phys. 105, 5467 (1996).
37. D. D. Koleske, S. M. Gates, and B. Jackson, J. Chem. Phys. 101, 3301 (1994).