Amorphous silicon carbide films prepared by H2 diluted silane-methane plasma

Journal of Crystal Growth

Volumn 264, Issue 1-3, 2004, Pages 7-12

  Hu, Zhihua ^a,b   Liao, Xianbo ^b   Diao, Hongwei ^b   Kong, Guanglin ^b   Zeng, Xiangbo ^b   Xu, Yanyue ^b  

^a YUNNAN NORMAL UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Annealing; A1. Optical properties; A3. Carbon rich silicon carbide films

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTALLIZATION; ENERGY GAP; FILM PREPARATION; INFRARED SPECTROSCOPY; LASER PULSES; MICROSTRUCTURE; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; REFRACTIVE INDEX; SILICON CARBIDE; SPECTROMETERS; ULTRAVIOLET SPECTROSCOPY;

CARBON-RICH SILICON CARBIDE FILMS; PHOTOELECTRONIC PROPERTIES; SUBBAND ABSORPTION;

AMORPHOUS FILMS;

EID: 1342328001     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.12.013     Document Type: Article

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