Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment

Journal of Applied Physics

Volumn 99, Issue 11, 2006, Pages

  Vasin, A V ^a   Kolesnik, S P ^a   Konchits, A A ^a   Kushnirenko, V I ^a   Lysenko, V S ^a   Nazarov, A N ^a   Rusavsky, A V ^a   Ashok, S ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON-RICH CHEMICALLY DISORDERED STRUCTURE; LOW-TEMPERATURE VACUUM TREATMENT; LUMINESCENT INTENSITY; PARAMAGNETIC DEFECTS;

AMORPHOUS MATERIALS; HEAT TREATMENT; HYDROGEN BONDS; LIGHT EMISSION; PARAMAGNETIC MATERIALS; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS;

SILICON CARBIDE;

EID: 33745266362     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2198935     Document Type: Article

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