Photoluminescence characteristics from amorphous SiC thin films with various structures deposited at low temperature

Solid State Communications

Volumn 133, Issue 9, 2005, Pages 565-568

  Xu, Jun ^a,b   Yang, Ling ^a   Rui, Yunjun ^a   Mei, Jiaxin ^a   Zhang, Xin ^a   Li, Wei ^a   Ma, Zhongyuan ^a   Xu, Ling ^a   Huang, Xinfan ^a   Chen, Kunji ^a  

^a NANJING UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

A. Silicon carbide; C. Structures; E. Luminescence

Indexed keywords

AMORPHOUS FILMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROSTRUCTURE; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; ULTRAVIOLET RADIATION;

FUSED QUARTZ PLATES; LOW GAS RATIO; OPTICAL BAND GAP; STRUCTURES;

THIN FILMS;

EID: 13444292477     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.12.036     Document Type: Article

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