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Volumn 15, Issue 3, 1997, Pages 568-572

CFX(X=1-3) radical densities during Si, SiO2, and Si3N4 etching employing electron cyclotron resonance CHF3 plasma

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[No Author keywords available]

Indexed keywords


EID: 0000575707     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580685     Document Type: Article
Times cited : (40)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.