SCOPUS 정보 검색 플랫폼

Journal of the Electrochemical Society

Volumn 149, Issue 8, 2002, Pages

Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal process

(7) Chang, T C a,c Mor, Y S b Liu, P T c Tsai, T M b Chen, C W b Mei, Y J d Sze, S M b,c

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c NATIONAL NANO DEVICE LABORATORIES (Taiwan)

d CHING YUN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC LOSSES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INTEGRATED CIRCUIT MANUFACTURE; LEAKAGE CURRENTS; MOISTURE; OXYGEN; PERMITTIVITY; PHOTORESISTS; PLASMAS;

HEXAMETHYLDISILAZANE; HYBRID ORGANIC SILOXANE POLYMER; LOW DIELECTRIC CONSTANT ORGANIC SILOXANE; OXYGEN PLASMA ASHING; PHOTORESIST REMOVAL PROCESS;

SILICONES;

EID: 0036686548 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1485776 Document Type: Article

Times cited : (46)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.