The effects of plasma treatment for low dielectric constant hydrogen silsesquioxane (HSQ)

Thin Solid Films

Volumn 332, Issue 1-2, 1998, Pages 345-350

  Liu, P T ^a   Chang, T C ^b   Sze, S M ^a,b   Pan, F M ^b   Mei, Y J ^a   Wu, W F ^b   Tsai, M S ^b   Dai, B T ^b   Chang, C Y ^a   Shih, F Y ^c   Huang, H D ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c Dow Corning Taiwan Inc   (Taiwan)

Author keywords

Dangling bonds; Hydrogen silsesquioxane; Low dielectric constant; Passivate; Plasma treatment

Indexed keywords

HYDROGEN INORGANIC COMPOUNDS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; PASSIVATION; PERMITTIVITY; PLASMA APPLICATIONS;

HYDROGEN SILSESQUIOXANE;

DIELECTRIC FILMS;

EID: 0032476235     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)91041-0     Document Type: Article

References (7)

1. N.P. Hacker, et al., SEMATECH Low Dielectric Constant Materials And Interconnects Workshop Proceedings, 1996, p. 233.
2. T. Ramos, A. Maskara, W. Ackerman, D.M. Smith, SEMATECH Low Dielectric Constant Materials and Interconnects Workshop Proceedings, 1996, p. 174.
3. T. Ramos, K. Roderick, A. Maskara, D.M. Smith, Materials Research Society Symposium Proceedings, Vol. 443, 1997, p. 91
4. B.T. Ahlburn, G.A. Brown, T.R. Seha, T.F. Zoes, Dielectrics for ULSI Multilevel Interconnection Conference, 1995, p. 36.
5. A. Nakashima, M. Egami, M. Komatsu, Y. Ohkura, M. Miyajima, H. Harada, S. Fukuyama, Dielectrics for ULSI Multilevel Interconnection Conference, 1997, p. 303.
6. V. Mc Gahay, A. Acovic, VLSI Multilevel Interconnection Conference, 1996, p. 116.
7. D. Thomas, G. Smith, Dielectrics for ULSI Multilevel Interconnection Conference, 1997, p. 361.