On the importance of ions and ion-molecule reactions to plasma-surface interface reactions

Journal of the American Society for Mass Spectrometry

Volumn 13, Issue 5, 2002, Pages 518-529

  Williams, Keri L ^a   Martin, Ina T ^a   Fisher, Ellen R ^a  

^a Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; FLUOROCARBONS; ION BEAMS; MASS SPECTROMETRY; PLASMA ETCHING;

PLASMA IONS;

IONS;

FLUOROCARBON; ION; SILANE DERIVATIVE; SILICON;

PLASMA;

ANALYTIC METHOD; ATOM; IMAGE ANALYSIS; IMAGING SYSTEM; ION TRANSPORT; MASS SPECTROMETRY; MEASUREMENT; MOLECULAR DYNAMICS; MOLECULAR INTERACTION; PLASMA; REACTION ANALYSIS; REVIEW; SURFACE PROPERTY;

EID: 0000376867     PISSN: 10440305     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1044-0305(02)00371-9     Document Type: Article

References (66)

1. Bruno G., Capezzuto P., Madan A. Plasma deposition of amorphous silicon-based materials. 1995;Academic Press, San Diego (CA).
2. Matsumi Y., Toyoda S., Hayashi Y., Miyamura M., Yoshikawa H., Komiya S. J. Appl. Phys. 60:1986;4102.
3. (a) Iacona F., Casella G.L.a, Via F., Lombardo S., Raineri V., Spoto G. Microelectron. Eng. 50:2000;67.
4. (b) Pankov V., Alonso J.C., Ortiz A. Analysis of structural changes in plasma-deposited fluorinated silicon dioxide films caused by fluorine incorporation using ring-statistics based mechanism. J. Appl. Phys. 86:1999;275.
5. d'Agostino R., Cramarossa F., Fracassi F., Illuzzi F. Plasma polymerization of fluorocarbons. d'Agostino R. Plasma deposition, treatment and etching of polymers. 1990;95-162 Academic Press, San Diego (CA).
6. Mathad G.S., Hess D.W., Meyyappan M. Plasma processing for silicon-based integrated circuits. Electrochem. Soc. Interface. 8:1999;34.
7. Hollahan J.R., Bell A.T. Techniques and applications of plasma chemistry. 1974;Wiley & Sons, New York.
8. Ada E.T., Kornienko O., Hanley L. Chemical modification of polystyrene surfaces by low-energy polyatomic ion beams. J. Phys. Chem. B. 102:1998;3959.
9. Wijesundara M.B.J., Ji Y., Ni B., Sinnott S.B., Hanley L. Effect of polyatomic ion structure on thin-film growth Experiments and molecular dynamics simulations . J. Appl. Phys. 88:2000;5004.
10. Wijesundara M.B.J., Hanley L., Ni B., Sinnott S.B. Effects of unique ion chemistry on thin-film growth by plasma-surface interactions. Proc. Natl. Acad. Sci. 97:2000;23.
11. Beck A.J., Candan S., Short R.D., Goodyear A., Braithwaite N.St.J. The role of ions in the polasma polymerization of Allylamine. J. Phys. Chem. B. 105:2001;5730. [and references therein].
12. Shamamian V.A., Hinshelwood D.D., Guerin D.C., Denes F.S., Manolache S. Mass spectrometric characterization of pulsed inductively coupled plasmas for deposition of thin polyethylene glycol-like polymer films. J. Photopolym. Sci. Technol. 14:2001;91.
13. Stoffels W.W., Stoffels E., Tachibana K. Polymerization of fluorocarbons in reactive ion etching plasmas. J. Vac. Sci. Technol. A. 16:1998;87.
14. Armentrout P.B. Kinetic energy dependence of ion-molecule reactions related to plasma chemistry. Inokuti M., Becker K. Fundamentals of plasma chemistry. 43:2000;187-229 Academic, New York. [Adv. Atomic, Molec., and Optical Phys.].
15. (a) Sugai H., Mitsuoka Y., Toyoda H. Observation of surface dissociation of low-energy polyatomic ions relevant to plasma processing. J. Vac. Sci. Technol. A. 16:1998;290.
16. (b) Mitsuoka Y., Toyoda H., Sugai H. Dissociative ion yields on metal-surfaces bombarded with low-energy fluorocarbon ions. Jpn. J. Appl. Phys. 34:1995;L1486.
17. + etching of Si Atomistic simulation and a simple mass balance model . J. Vac. Sci. Technol. A. 18:2000;411.
18. + Product distributions and energies . Thin Solid Films. 374:2000;150.
19. +. J. Vac. Sci. Technol. A. 19:2001;175.
20. McCurdy P.R., Bogart K.H.A., Dalleska N.F., Fisher E.R. A modified molecular beam instrument for the imaging of radicals interacting with surfaces during plasma processing. Rev. Sci. Instrum. 68:1997;1684.
21. 3 plasma molecular beam. Chem. Phys. Lett. 274:1997;120.
22. 3 plasmas. J. Phys. Chem. B. 103:1999;6919.
23. 3 plasma processing of metal and polymer substrates. J. Phys. Chem. B. 105:2001;2749.
24. 2. J. Phys. Chem. B. 101:1997;10016.
25. 2 inductively coupled rf plasmas. Chem. Mater. 9:1997;349.
26. (b) MartinI. T.MalkovG.FisherE. R.unpublished work.
27. 2, HD) from thermal to 30 eV cm. J. Chem. Phys. 83:1985;166.
28. Teloy E., Gerlich D. Integral cross-sections for ion-molecule reactions. 1. Guided beam technique. Chem. Phys. 4:1974;417.
29. (a) Okada Y., Wagner S. Etching of crystalline silicon using germanium tetrafluoride. J. Electrochem. Soc. 1990;1957
30. (b) Darcy A., Galijatovic A., Barth R., Kenny T., Krantzman K.D., Schoolcraft T.A. Molecular dynamics simulations of silicon-fluorine etching. J. Mol. Graphics. 14:1996;260
31. (c) van den Hoek P.J., Ravenek W., Baerends E.J. Phys. Rev. B. 38:1988;12508
32. (d) Sparks D.R. J. Electrochem. Soc. 139:1992;1736
33. (e) Boyd H., Tang M.J. Applications for silicon tetrafluoride in plasma-etching. Solid State Technol. 22:1979;133
34. 4 etching of high-aspect-ratio holes. Jpn. J. Appl. Phys. 35:1996;2488.
35. Winters H.F., Coburn J.W. Surface science aspects of etching reactions. Surf. Sci. Rep. 14:1992;161.
36. Uchida Y., Taguchi K., Sugahara S., Matsumura M. A fluorinated organic-silica film with extremely low dielectric constant. Jpn. J. Appl. Phys. 38:(1):1999;2368.
37. 2 plasmas. J. Non-Cryst. Solid. 39:1984;66.
38. (b) Lee H., Deneufville J.P., Ovshinsky S.R. Laser-induced fluorescence detection of reactive intermediates in diffusion flames and in glow-discharge deposition reactors. J. Non-Cryst. Solid. 59-60:1983;671.
39. Cicala G., Bruno G., Capezzuto P. Plasma deposition of amorphous silicon alloys from fluorinated gases. Pure Appl. Chem. 68:1996;1143.
40. Williams K. L.; Fisher E. R.J. Vac. Sci. Technol. A. (manuscript in preparation).
41. Steen M. L.; Kull K. R.; Fisher E. R. Comparison of surface interactions for NH and NH2 radicals on polymer and metal substrates. J. Appl. Phys.in press.
42. 4 from thermal energy to 50 eV cm. J. Chem. Phys. 90:1989;2213.
43. + (x = 1, 2, 3). J. Chem. Phys. 88:1988;6898.
44. +. J. Phys. Chem. 97:1993;10198.
45. 4. Chem. Phys. Lett. 179:1991;435.
46. Zhang J.; Fisher E. R. unpublished work.
47. 2 mixtures. J. Appl. Phys. 54:1983;3524.
48. Lieberman M.A., Lichtenberg A.J. Principles of plasma discharges and material processing. 1994;Wiley & Sons, New York.
49. 2 and hexafluoropropylene oxide plasmas. J. Vac. Sci. Technol. A. 18:2000;2685.
50. +. J. Appl. Phys. 86:1999;5938.
51. Murri R., Schiavulli L., Bruno G., Capezzuto P., Grill G. Deposition rate, ion-bombardment and gap states density in glow-discharge a-Si-H,F films. Thin Solid Films. 182:1989;105.
52. 3 Plasma. J. Vac. Sci. Technol. A. 15:1997;568.
53. 2 kinetics and related mechanisms in the presence of polymers in fluorocarbon plasmas. J. Appl. Phys. 81:1997;2124.
54. Williams K. L.; Zhang J.; Fisher E. R. unpublished work.
55. 2 during deposition of amorphous fluorocarbon films. ACS Symp. Ser. 787:2001;168. [Fluorinated Coatings, Surfaces, and Films].
56. 2-rich films using CW and pulsed hexafluoropropylene oxide plasmas. Chem. Mater. 12:2000;2014.
57. Mackie N.M., Castner D.G., Fisher E.R. Characterization of pulsed plasma polymerized aromatic films. Langmuir. 14:1998;1227.
58. Vartanian V., Beu L., Lii T., Graves D., Tonnis E.J., Jewett R., Wofford B., Beva J., Hartz C., Gunn M. Plasma abatement reduces PFC emission. Semicon. Intern. 23:2000;191.
59. 2 production and loss mechanisms in fluorocarbon discharges Fluorine-poor conditions and polymerization . J. Appl. Phys. 85:1999;3952.
60. 4 plasmas. J. Appl. Phys. 85:1999;7562.
61. x radicals in radio-frequency fluorocarbon plasmas. J. Vac. Sci. Technol. A. 14:1996;384
62. (d) Haverlag M., Stoffels W.W., Stoffels E., Kroesen G.M.W., de Hoog F.J. Measurements of radical densities in radio-frequency fluorocarbon plasmas using infrared absorption spectroscopy. J. Vac. Sci. Technol. A. 12:1994;3102.
63. Rinsch C.L., Chen X., Panchalingam V., Eberhart R.C., Wang J.H., Timmons R.B. Pulsed radio frequency plasma polymerization of allyl alcohol Controlled deposition of surface hydroxyl Groups . Langmuir. 12:1996;2995.
64. 3 plasmas. J. Appl. Phys. 84:1998;4736.
65. Martin I. T.; Fisher E. R.; Amicangelo J. A.; Armentrout P. B. J. Phys. Chem. (manuscript in preparation).
66. Barton D., Bradley J.W., Gibson K.J., Steele D.A., Short R.D. An in-situ comparison between vuv photon and ion energy fluxes to polymer surfaces immersed in an rf plasma. J. Phys. Chem. B. 104:2000;7150.