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Volumn 22, Issue 5, 2004, Pages 2168-2176

Ion effects on CF 2 surface interactions during C 3F 8 and C 4F 8 plasma processing of Si

Author keywords

[No Author keywords available]

Indexed keywords

IMAGING OF RADICALS INTERACTING WITH SURFACES (IRIS); PLASMA PROCESSING; RADIO FREQUENCY (RF) POWER; SOURCE PRESSURE;

EID: 8444253742     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1781180     Document Type: Article
Times cited : (41)

References (37)
  • 29
    • 8444239453 scopus 로고
    • edited by S. J. Moss and A. Ledwith Chapman and Hall, New York
    • S. J. Moss, in The Chemistry of the Semiconductor Industry, edited by S. J. Moss and A. Ledwith (Chapman and Hall, New York, 1987), p. 391.
    • (1987) The Chemistry of the Semiconductor Industry , pp. 391
    • Moss, S.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.