Dry ashing process evaluation for porous ULK films

Microelectronic Engineering

Volumn 73-74, Issue , 2004, Pages 351-356

  Louveau, O ^a   Bourlot, C ^b   Marfoure, A ^c   Kalinovski, I ^c   Su, J ^c   Hills, G ^c   Louis, D ^b  

^a STMICROELECTRONICS   (France)

^b CEA LETI   (France)

^c NOVELLUS SYSTEMS INC   (United States)

Author keywords

Dielectric; Dry process; Interconnect; Low k; Photoresist stripping

Indexed keywords

ETCHING; HIGH TEMPERATURE EFFECTS; HYDROGEN; OXIDATION; PERMITTIVITY; PHOTORESISTS; PLASMAS; POROUS MATERIALS;

DRY PROCESSES; INTERCONNECTS; LOW K; PHOTORESIST STRIPPING;

MICROELECTRONICS;

EID: 2542455181     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(04)00124-8     Document Type: Conference Paper

References (8)

1. Shamiryan D., Baklanov M.R., Vanhaelemeersch S., Maerx K. J. Vac. Sci. Technol. B. 20:2002;1923-1928.
2. K. Mosig, T. Jacobs, P. Kofron, M. Daniels, Proceedings of IITC, 2001, pp. 292-294.
3. M. Assous, J. Simon, C. Bourlot, M. Fayolle. Proceedings of IITC, 2003, pp. 97-99.
4. S. Li, K. Ostrowski., I. Kalinovski, J. Su, G. Hills. Proceedings Symposium on interconnects and low- k dielectrics, Electrochemical Society, Orlando, October 2003.
5. Waldfried C., Han Q., Kuo J. Proc. Electrochem. Soc. 27:2000;207-212.
6. A. Matsushita, N. Ohashi, K. Inulai, H.J. Shin, S. Sone, Proceedings of IITC, 2003, pp. 147-149.
7. Louis D., Arvet C., Lajoinie E., Peyne C. Microelectron. Eng. 53:1999;381-384.
8. S. Lamy, O. Louveau, G. Fanget, M. Fayolle, N. Rochat, Proceedings of IITC, 2002, pp. 30-32.