MC simulation of strained-Si MOSFET with full-band structure and quantum correction

IEEE Transactions on Electron Devices

Volumn 51, Issue 6, 2004, Pages 962-970

  Fan, Xiao Feng ^a   Wang, Xin ^a,b   Winstead, Brian ^c   Register, Leonard F ^a   Ravaioli, Umberto ^d   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c MOTOROLA INC   (United States)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Full band Monte Carlo (MC); MOSFET simulations; Quantum effects; SiGe heterostructures; Strained silicon

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; MONTE CARLO METHODS; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

MONTE CARLO SIMULATOR; QUANTUM CONFINEMENT; QUANTUM CORRECTION;

MOSFET DEVICES;

EID: 2942672642     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.828296     Document Type: Article

References (21)

1. 1-x structures grown by molecular-beam epitaxy," Appl. Phys. Lett., vol. 59, no. 13, pp. 1611-1613, Sept. 23, 1991.
2. S. F. Nelson, K. Ismail, J. O. Chu, and B. S. Meyerson, "Room-temperature electron mobility in strained-Si/SiGe heterostructures," Appl. Phys. Lett., vol. 63, no. 3, pp. 367-369, July 19, 1993.
3. R. Oberhuber, G. Zandler, and P. Vogl, "Subband structure and mobility of two-dimensional holes in strained-Si-SiGe MOSFETs," Phys. Rev. B, Condens. Matter, vol. 58, no. 15, pp. 9941-9948, 1998.
4. x channel MOSFETs," J. Appl. Phys., vol. 80, no. 9, pp. 5121-5128, Nov. 1996.
5. S. Mudanai, L. F. Register, A. F. Tasch, and S. K. Banerjee, "Understanding the effects of wave function penetration on the inversion layer capacitance of NMOSFETs," IEEE Electron Device Lett., vol. 22, pp. 145-147, Mar. 2001.
6. M. V. Fischetti, F. Gamiz, and W. Hansch, "On the enhanced electron mobility in strained-silicon inversion layers," J. Appl. Phys., vol. 92, no. 12, pp. 7320-7324, Dec. 2002.
7. C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials," Rev. Mod. Phys., vol. 55, no. 3, pp. 645-705, 1983.
8. B. Winstead and U. Ravaioli, "A quantum correction based on Schrödinger equation applied to Monte Carlo device simulation," IEEE Trans. Electron Devices, vol. 50, pp. 440-446, Feb. 2003.
9. ____, "A coupled Schrödinger/Monte Carlo technique for quantum-corrected device simulation," in Proc. Device Research Conf., 2001, pp. 169-170.
10. P. Friedel, M. S. Hybertsen, and M. Schluter, "Local empirical pseudopotential approach to the optical properties of Si-Ge superlattices," Phys. Rev. B, Condens. Matter, vol. 39, no. 11, pp. 7974-7977, 1989.
11. X. Wang, V. Chandramouli, C. M. Maziar, and A. F. Tasch Jr., "Simulation program suitable for hot carrier studies: An efficient multiband Monte Carlo model using both full and analytic band structure description for silicon," J. Appl. Phys., vol. 73, no. 7, pp. 3339-3347, Apr. 1993.
12. C. Canali, C. Jacoboni, F. Nava, G. Ottaviani, and A. Alberigi-Quaranta, "Electron drift velocity in silicon," Phys. Rev. B, Condens. Matter, vol. 12, no. 4, pp. 2265-2284, 1975.
13. M. V. Fischetti and S. E. Laux, "Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects," Phys. Rev. B, Condens. Matter, vol. 38, no. 14, pp. 9721-9745, November 15, 1988.
14. U. Ravaioli, B. Winstead, C. Wordelman, and A. Kepkep, "Monte Carlo simulation for ultra-small MOS devices," Superlatt. Microstructures, vol. 27, no. 2/3, pp. 137-145, 2000.
15. S. Tagaki, A. Toriumi, M. Iwase, and H. Tango, "On the universality of inversion layer mobility in Si MOSFETs: Part I - Effects of substrate impurity concentration," IEEE Trans. Electron Devices, vol. 41, pp. 2357-2362, Dec. 1994.
16. M. V. Fischetti and S. E. Laux, "Band structure, deformation potentials, and carrier mobility in strained-Si, Ge, and SiGe alloys," J. Appl. Phys., vol. 80, no. 4, pp. 2234-2252, 1996.
17. S. M. Goodnick, D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy, and O. L. Krivanek, "Surface roughness at the Si(100)-SiO2 interface," Phys. Rev. B, Condens. Matter, vol. 32, pp. 8171, 1985.
18. X. Wang, "Monte Carlo simulation of charge transport in Si-based heterostructure transistors," Ph.D. dissertation, Univ. Texas, Austin, 2002.
19. K. K. Rim, J. L. Hoyt, and J. F. Gibbons "Fabrication and analysis of deep submicron strained-Si N-MOSFETs," IEEE Trans. Electron Devices, vol. 47, pp. 1406-1415, July 2000.
20. J. Welser, J. L. Hoyt, S. Takagi, and J. F. Gibbons, "Strain dependence of the performance enhancement in strained-Si n-MOSFETs," in IEDM Tech. Dig., Dec. 11-14, 1994, pp. 373-376.
21. MIT well-tempered device structure. [Online] Available: http://www-mtl.mit.edu/Well