Exploring the limit of strain-induced performance gain in p- And n-SSDOI-MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 601-604

  Bufler, F M ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GAIN CONTROL; MONTE CARLO METHODS; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY; STRAIN; TENSILE STRENGTH; TRANSPORT PROPERTIES; INTELLIGENT SYSTEMS;

SCALING; STRAIN-INDUCED PERFORMANCE; STRAINED SI DIRECTLY ON INSULATOR (SSDOI); TENSILE STRAIN SHIFTS;

MOSFET DEVICES;

FILM-THICKNESS; MONTE CARLO'S SIMULATION; MOSFETS; P-TYPE; PERFORMANCE ENHANCEMENTS; PERFORMANCE GAIN; SCALINGS; SI-FILMS; STRAIN-INDUCED PERFORMANCE;

EID: 21644457397     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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