Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs

IEEE Transactions on Electron Devices

Volumn 47, Issue 10, 2000, Pages 1858-1863

  Abramo, Antonio ^a   Cardin, Andrew ^a   Selmi, Luca ^a   Sangiorgi, Enrico ^a  

^a UNIVERSITY OF UDINE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; EIGENVALUES AND EIGENFUNCTIONS; ELECTROSTATICS; NUMERICAL ANALYSIS; QUANTUM THEORY; SEMICONDUCTING SILICON; TWO DIMENSIONAL;

CHARGE DISTRIBUTION; QUANTUM EFFECTS; QUANTUM MECHANICAL SIMULATION; SCHROEDINGER EQUATION;

MOSFET DEVICES;

EID: 0034294265     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870562     Document Type: Article

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